IMX9T110 Rohm Semiconductor, IMX9T110 Datasheet
IMX9T110
Manufacturer Part Number
IMX9T110
Description
TRANS DUAL NPN 20V 500MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.IMX9T110.pdf
(4 pages)
Specifications of IMX9T110
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
400mV @ 20mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
560 @ 10mA, 3V
Power - Max
300mW
Frequency - Transition
350MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
20V
Gain Bandwidth Ft Typ
350MHz
Power Dissipation Pd
300mW
Dc Collector Current
500mA
Transistor Case
RoHS Compliant
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
12 V
Continuous Collector Current
500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Frequency
350 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
560
Gain Bandwidth Product Ft
350 MHz
Dc Current Gain Hfe
560
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMX9T110
IMX9T110TR
IMX9T110TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMX9T110
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Features
Structure
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta = 25 C)
Absolute maximum ratings (Ta = 25 C)
machine.
interference.
200mW per element must not be exceeded.
Parameter
Parameter
Symbol
V
V
V
Tstg
Pd
Tj
CBO
CEO
EBO
I
C
Symbol
V
BV
BV
BV
Cob
Ron
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
1
and Tr
300(TOTAL)
Min.
560
25
20
12
55~ 150
Limits
500
150
25
20
12
2
.
Typ.
0.18
350
0.8
8
2700
Max.
0.5
0.5
0.4
External dimensions (Units : mm)
Unit
mW
mA
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
V
V
V
C
C
MHz
Unit
0.95 0.95
(4)
2.9±0.2
1.9±0.2
(3)
pF
0.3
V
V
V
V
A
A
(5)
0.05
(2)
0.1
I
I
I
V
V
I
V
V
V
I
(6)
(1)
C
C
E
C
B
CE
CB
EB
CE
CB
/I
10 A
1mA, V
10 A
1mA
B
Abbreviated symbol: X9
10V
20V
3V, I
10V, I
10V, I
500mA/20mA
Equivalent circuit
C
i
E
E
0.15 0.06
Tr
10mA
100mVrms, f 1kHz
0A, f 1MHz
2
50mA, f 100MHz
(4)
Conditions
(3)
0.1
1.1 0.2
0.8±0.1
(5)
(2)
0.1
Tr
0~0.1
(6)
(1)
1
IMX9
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IMX9T110 Summary of contents
Page 1
Transistors General purpose transistor (isolated dual transistors) IMX9 Features 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut ...
Page 2
Transistors Packaging specifications Packaging type Code Part No. Basic ordering unit (pieces) IMX9 Electrical characteristic curves 2.0 Ta=25 C 1.6 A 2.0 A 1.6 1.4 A 1.8 A 1.2 A 1.2 1.0 A 0.8 A 0.8 0.6 A 0.4 A ...
Page 3
Transistors 2000 Measured using 1000 pulse current. 500 200 100 Ta 100 100 200 5001000 (mA) COLLECTOR CURRENT ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...