MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 18

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

Final Product/Process Change Notification #16266
MMSZ22T1G
MMSZ22T1H
MMSZ24T1
MMSZ24T1G
MMSZ24T1H
MMSZ27T1
MMSZ27T1G
MMSZ27T3
MMSZ27T3G
MMSZ2V4ET1G
MMSZ2V4T1G
MMSZ2V4T3G
MMSZ2V7ET1G
MMSZ2V7T1G
MMSZ2V7T3G
MMSZ30T1G
MMSZ33T1G
MMSZ33T3G
MMSZ36T1
MMSZ36T1G
MMSZ39T1
MMSZ39T1G
MMSZ3V0T1G
MMSZ3V3T1G
MMSZ3V3T1H
MMSZ3V6T1G
MMSZ3V6T3G
MMSZ3V9T1
MMSZ3V9T1G
MMSZ3V9T3G
MMSZ43T1G
MMSZ4678T1G
MMSZ4679T1G
MMSZ4680ET1G
MMSZ4680T1G
MMSZ4681T1G
MMSZ4681T1H
MMSZ4682T1G
MMSZ4683T1G
MMSZ4684T1G
MMSZ4685T1G
MMSZ4686T1G
MMSZ4687T1G
MMSZ4688T1G
MMSZ4689ET1G
MMSZ4689T1
MMSZ4689T1G
MMSZ4689T3
MMSZ4689T3G
MMSZ4690T1
MMSZ4690T1G
MMSZ4690T3G
MMSZ4691T1G
MMSZ4692T1G
MMSZ4693T1
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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