PRODUCT DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride “Triple-Passivation” process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, tem- perature drift of ...
MAT01–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Breakdown Voltage BV CEO Offset Voltage V OS Offset Voltage Stability First Month V /Time OS Long Term Offset Current I OS Bias Current I B Current Gain h FE ∆h Current Gain Match FE ...
TYPICAL ELECTRICAL CHARACTERISTICS Parameter Symbol Average Offset Voltage Drift TCV Average Offset Current Drift TCI Collector-Emitter-Leakage Current I CES Collector-Base-Leakage Current I CBO Gain Bandwidth Product f T ∆V Offset Voltage Stability NOTES 1 Exclude first hour of operation to ...
APPLICATION NOTES Application of reverse bias voltages to the emitter-base junctions in excess of ratings (5 V) may result in degradation matching characteristics. Circuit designs should be checked FE to ensure that reverse bias voltages above 5 ...