EMT1DXV6T5G ON Semiconductor, EMT1DXV6T5G Datasheet

EMT1DXV6T5G

Manufacturer Part Number

EMT1DXV6T5G

Description

TRANS PNP GP DUAL 60V SOT-563

Manufacturer

ON Semiconductor

Datasheet

1.EMT1DXV6T1G.pdf (4 pages)

Specifications of EMT1DXV6T5G

Transistor Type

2 PNP (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

500mV @ 5mA, 50mA

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 1mA, 6V

Power - Max

500mW

Frequency - Transition

140MHz

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EMT1DXV6T5G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

EMT1DXV6T5G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 4
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EMT1DXV6T1,

EMT1DXV6T5

Dual General Purpose

Transistor

PNP Dual

applications. It is housed in the SOT−563 which is designed for low

power surface mount applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad.

November, 2005 − Rev. 1

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current − Continuous

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Thermal Resistance,

Junction and Storage

This transistor is designed for general purpose amplifier

Lead−Free Solder Plating

Low V

These are Pb−Free Devices

Junction-to-Ambient

Temperature Range

Derate above 25°C

(Both Junctions Heated)

(One Junction Heated)

= 25°C

CE(SAT)

Characteristic

Rating

, t0.5 V

Symbol

CEO

CBO

, T

EBO

qJA

stg

−55 to +150

(Note 1)

Value

−100

−6.0

Max

−60

−50

357

350

500

250

2.9

4.0

mW/°C

mAdc

°C/W

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

(Note: Microdot may be in either location)

ORDERING INFORMATION

(3)

(4)

3T = Specific Device Code

MARKING DIAGRAM

http://onsemi.com

= Month Code

= Pb−Free Package

CASE 463A

SOT−563

STYLE 1

3T M G

(5)

Publication Order Number:

(2)

EMT1DXV6T1/D

(1)

(6)

Related parts for EMT1DXV6T5G

EMT1DXV6T5G Summary of contents

Page 1

EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications housed in the SOT−563 which is designed for low power surface mount applications. Features • Lead−Free Solder Plating • , t0.5 ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. ORDERING INFORMATION Device EMT1DXV6T1 EMT1DXV6T1G EMT1DXV6T5 EMT1DXV6T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. EMT1DXV6T1, EMT1DXV6T5 (T = 25° ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS T = 25°C A 120 COLLECTOR VOLTAGE (V) CE Figure 1. I − 1.5 1 0.5 0 0.01 0 BASE ...

Page 4

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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