HN1B01FDW1T1 ON Semiconductor, HN1B01FDW1T1 Datasheet - Page 3

• Manufacturer Part Number: HN1B01FDW1T1
• Description: TRANS BR NPN/PNP DUAL 60V SC74-6
• Manufacturer: ON Semiconductor

Specifications of HN1B01FDW1T1

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 2µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 380mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: HN1B01FDW1T1OS

−160
−120
−200
1000
−0.1
−80
−40
100
−10
10
−1
0
−1
−1
0
V
CE
Figure 1. Collector Saturation Region
V
−2.0 mA
CE
−1
= −6.0 V
, COLLECTOR−EMITTER VOLTAGE (V)
I
I
Figure 5. V
C
C
Figure 3. DC Current Gain
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
−10
−10
−2
25 C
BE(sat)
−1.5 mA
Typical Electrical Characteristics: PNP Transistor
−3
−25 C
T
versus I
A
= 100 C
−100
−100
−1.0 mA
−4
−0.5 mA
I
B
C
T
I
T
C
= −0.2 mA
A
A
/I
= 25 C
B
= 25 C
−5
= 10
HN1B01FDW1T1
http://onsemi.com
−1000
−1000
−6
3
−10,000
−1000
−0.01
1000
−100
−0.1
−0.1
100
−10
10
−1
−1
−1
−1
0 −0.1
COMMON EMITTER
V
CE
V
I
CE
C
= 6 V
/I
B
= −1.0 V
−0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1
= 10
Figure 6. Base−Emitter Voltage
V
I
I
BE
Figure 4. V
C
C
Figure 2. DC Current Gain
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, BASE−EMITTER VOLTAGE (V)
25 C
−10
−10
25 C
CE(sat)
T
−25 C
T
A
A
T
= 100 C
= 100 C
A
versus I
= 100 C
−100
−100
−25 C
C
25 C
−25 C
−1000
−1000