EMD2T2R Rohm Semiconductor, EMD2T2R Datasheet - Page 2

• Manufacturer Part Number: EMD2T2R
• Description: TRANS PNP/NPN 50V 30MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD2T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 56
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD2T2R; EMD2T2RTR

Transistors
DTr
∗
Type
EMD2
UMD2N
IMD2A
Electrical characteristics (Ta = 25°C)
Packaging specifications
Electrical characteristic curves
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Fig.1 Input voltage vs. output current
Transition frequency of the device
500m
200m
100m
100
1
50
20
10
100µ 200µ 500µ 1m
5
2
1
(NPN)
(ON characteristics)
Parameter
OUTPUT CURRENT : I
Ta=−40˚C
Package
Code
Basic ordering
unit (pieces)
100˚C
25˚C
2m
5m 10m 20m 50m 100m
O
(A)
V
O
=0.2V
Symbol
R
V
V
V
I
R
O (off)
G
2
O (on)
f
8000
I
I (off)
I (on)
/R
T
T2R
I
1
I
1
Min.
15.4
0.8
56
Fig.2 Output current vs. input voltage
−
3
−
−
−
−
10m
500µ
200µ
100µ
50µ
20µ
10µ
5m
2m
1m
1µ
5µ
2µ
Taping
3000
0
TR
V
Ta=100˚C
CC
(OFF characteristics)
Typ.
=5V
250
0.5
−40˚C
0.1
22
25˚C
−
−
−
−
−
1
INPUT VOLTAGE : V
1.0
T108
3000
Max.
0.36
28.6
0.5
0.3
0.5
1.2
−
−
−
1.5
MHz
Unit
2.0
mA
µA
kΩ
I (off)
V
V
−
−
(V)
2.5
V
V
I
V
V
V
V
O
CE
CC
O
I
CC
O
= 10mA, I
= 5V
= 0.2V, I
= 5V, I
= 10V, I
3.0
= 5V, I
= 50V, V
EMD2 / UMD2N / IMD2A
O
O
E
= 5mA
O
= −5mA, f = 100MHz
= 100µA
I
Conditions
500
200
100
= 0.5mA
=5 mA
I
= 0V
50
20
10
1k
5
2
1
100µ 200µ
Fig.3 DC current gain vs. output
−
−
current
OUTPUT CURRENT : I
500µ 1m
Ta=100˚C
−40˚C
25˚C
Rev.C
2m
∗
5m 10m 20m 50m 100m
O
(A)
V
O
=5V
2/3