MT46V32M16P-6T IT:F Micron Technology Inc, MT46V32M16P-6T IT:F Datasheet - Page 24

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 66-Pin TSOP Tray

MT46V32M16P-6T IT:F

Manufacturer Part Number
MT46V32M16P-6T IT:F
Description
DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V32M16P-6T IT:F

Density
512 Mb
Maximum Clock Rate
333 MHz
Package
66TSOP
Address Bus Width
15 Bit
Operating Supply Voltage
2.5 V
Maximum Random Access Time
0.7 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Package / Case
66-TSOP
Organization
32Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
195mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 18:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
AC Characteristics
Parameter
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
Electrical Characteristics and Recommended AC Operating Conditions (-5B) (continued)
Notes 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C ≤ T
A
≤ +70°C; V
DD
Q = +2.6V ±0.1V, V
DD
= +2.6V ±0.1V
24
Symbol
t
t
t
XSNR
XSRD
t
WTR
n/a
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
200
15
70
2
t
QH -
-5B
t
DQSQ
Max
©2000 Micron Technology, Inc. All rights reserved.
Units
t
t
ns
CK
ns
CK
ns
Notes
26

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