M25PX64-VME6G NUMONYX, M25PX64-VME6G Datasheet - Page 19

• Manufacturer Part Number: M25PX64-VME6G
• Description: NEW 64MB T9HX SECTOR ERASE
• Manufacturer: NUMONYX

Specifications of M25PX64-VME6G

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 24b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 8M
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

5
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from ‘1’ to ‘0’). The device
is subsector, sector or bulk erasable (bits are erased from ‘0’ to ‘1’) but not page erasable.
Figure 8.
HOLD
W/V
DQ0
DQ1
8 388 608 bytes (8 bits each)
2048 subsectors (4 Kbytes each)
128 sectors (64 Kbytes each)
32768 pages (256 bytes each)
64 OTP bytes located outside the main memory array.
PP
C
S
Block diagram
Address register
Control logic
and counter
00000h
I/O shift register
256 bytes (page size)
High voltage
generator
X decoder
data buffer
256 byte
7FFFFFh
000FFh
64 OTP bytes
register
Status
AI13722b
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