MUN5235DW1T1G ON Semiconductor, MUN5235DW1T1G Datasheet - Page 26

TRANS BRT NPN DUAL 50V SOT-363

MUN5235DW1T1G

Manufacturer Part Number
MUN5235DW1T1G
Description
TRANS BRT NPN DUAL 50V SOT-363
Manufacturer
ON Semiconductor
Datasheets

Specifications of MUN5235DW1T1G

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
MUN5235DW1T1G
MUN5235DW1T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUN5235DW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5235DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MUN5235DW1T1G
Quantity:
27 000
Final Product/Process Change Notification #16266
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SMSZ1600-18T3DSG
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SMSZ1600-20T3G
SMSZ1600-23T3
SMSZ1600-23T3DS
SMSZ1600-23T3DSG
SMSZ1600-31T3
SMSZ1600-31T3DS
SMSZ1600-31T3DSG
SMSZ1600-31T3G
SMSZ1600-35T3
SMSZ1600-35T3DS
SMSZ1600-35T3DSG
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 26 of 36

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