NSBC144EPDXV6T1G ON Semiconductor, NSBC144EPDXV6T1G Datasheet - Page 9

• Manufacturer Part Number: NSBC144EPDXV6T1G
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC144EPDXV6T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSBC144EPDXV6T1GOS; NSBC144EPDXV6T1GOS; NSBC144EPDXV6T1GOSTR

0.8
0.6
0.4
0.2
0.01
0.1
1
0
10
1
0
0
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR
I
C
/I
B
10
Figure 24. Output Capacitance
= 10
V
Figure 22. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
20
CE(sat)
100
0.1
10
1
T
0
Figure 26. Input Voltage versus Output Current
30
A
= -25°C
versus I
V
O
= 0.2 V
10
f = 1 MHz
I
T
C
E
40
40
A
= 0 V
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75°C
25°C
20
50
50
9
T
0.001
1000
A
30
0.01
100
100
= -25°C
0.1
10
10
1
1
0
Figure 25. Output Current versus Input Voltage
40
75°C
25°C
75°C
2
Figure 23. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
in
50
, INPUT VOLTAGE (VOLTS)
25°C
4
10
T
A
= -25°C
6
V
O
= 5 V
T
A
V
8
= 75°C
CE
= 10 V
25°C
-25°C
100
10