MUN5211DW1T1 ON Semiconductor, MUN5211DW1T1 Datasheet - Page 8

• Manufacturer Part Number: MUN5211DW1T1
• Description: TRANS BRT NPN DUAL 50V SOT363
• Manufacturer: ON Semiconductor

Specifications of MUN5211DW1T1

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: MUN5211DW1T1OSCT

0.01
0.8
0.6
0.4
0.2
0.1
10
1
0
1
0
0
I
C
/I
B
= 10
10
Figure 14. Output Capacitance
Figure 12. V
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1G
20
20
CE(sat)
100
0.1
10
1
T
0
A
Figure 16. Input Voltage versus Output Current
30
= -25°C
versus I
V
O
= 0.2 V
10
C
40
f = 1 MHz
I
T
E
40
A
= 0 V
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75°C
25°C
20
50
50
8
T
0.001
A
30
1000
0.01
100
100
= -25°C
0.1
10
10
1
1
0
Figure 15. Output Current versus Input Voltage
40
75°C
25°C
75°C
2
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
in
50
, INPUT VOLTAGE (VOLTS)
25°C
4
10
T
A
= -25°C
6
V
O
= 5 V
T
A
V
8
= 75°C
CE
= 10 V
25°C
-25°C
100
10