EMA6DXV5T1 ON Semiconductor, EMA6DXV5T1 Datasheet - Page 2

• Manufacturer Part Number: EMA6DXV5T1
• Description: TRANS BR DUAL COMMON EMIT SOT553
• Manufacturer: ON Semiconductor

Specifications of EMA6DXV5T1

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Other names: EMA6DXV5T1OS; EMA6DXV5T1OS; EMA6DXV5T1OSTR

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage (Note 3)
DC Current Gain
Collector−Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
(V
(V
(V
(I
(I
(V
(I
(V
(V
C
C
C
CB
CE
EB
CE
CC
CC
= 10 mA, I
= 2.0 mA, I
= 10 mA, I
= 6.0 V, I
= 50 V, I
= 50 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
E
E
B
C
B
C
B
= 0)
= 0)
= 0)
= 5.0 mA)
= 1.0 mA)
B
B
= 0)
= 0)
= 3.5 V, R
= 0.25 V, R
Characteristic
L
L
= 1.0 kW)
= 1.0 kW)
350
300
250
200
150
100
50
0
−50
(T
A
= 25 C unless otherwise noted)
EMA6DXV5T1, EMA6DXV5T5
R
T
qJA
A
, AMBIENT TEMPERATURE (5 C)
0
Figure 1. Derating Curve
= 370 C/W
http://onsemi.com
50
2
V
V
Symbol
V
(BR)CBO
(BR)CEO
CE(sat)
I
I
I
V
V
CBO
CEO
h
EBO
R1
FE
OL
OH
100
32.9
Min
160
4.9
50
50
−
−
−
−
−
150
Typ
350
47
−
−
−
−
−
−
−
−
Max
0.25
61.1
100
500
0.2
0.2
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW