MUN5312DW1T1 ON Semiconductor, MUN5312DW1T1 Datasheet

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MUN5312DW1T1

Manufacturer Part Number
MUN5312DW1T1
Description
TRANS BRT DUAL 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5312DW1T1G.pdf (34 pages)

Specifications of MUN5312DW1T1

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-

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MUN5311DW1T1G Series
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
i n t e g r a t i n g
MUN5311DW1T1G series, two complementary BRT devices are
housed in the SOT−363 package which is ideal for low power surface
mount applications where board space is at a premium.
Features
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 12
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Thermal Resistance −
Junction and Storage Temperature
The Bias Resistor Transistor (BRT) contains a single transistor with
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
T
Junction-to-Ambient
T
Junction-to-Ambient
Junction-to-Lead
A
A
(Both Junctions Heated)
2
(One Junction Heated)
, − minus sign for Q
= 25°C
= 25°C
Characteristic
Characteristic
Rating
t h e m
(T
1
A
(PNP) omitted)
i n t o
= 25°C unless otherwise noted, common for Q
Preferred Devices
a
Symbol
Symbol
Symbol
T
V
V
R
R
R
J
P
P
CBO
CEO
, T
s i n g l e
I
qJA
qJA
qJL
C
D
D
stg
187 (Note 1)
256 (Note 2)
670 (Note 1)
490 (Note 2)
250 (Note 1)
385 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
1.5 (Note 1)
2.0 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
d e v i c e .
Value
Max
Max
100
50
50
I n
mW/°C
mW/°C
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Unit
mW
mW
Vdc
Vdc
°C
t h e
1
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
ORDERING AND DEVICE MARKING
xx
M
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
(3)
(4)
Q
1
MARKING DIAGRAM
http://onsemi.com
http://onsemi.com
= Device Code
= Date Code*
= Pb−Free Package
R
INFORMATION
2
6
1
CASE 419B
SOT−363
6
STYLE 1
(5)
R
xx M G
1
Publication Order Number:
R
(2)
G
1
1
MUN5311DW1T1/D
R
2
Q
(1)
(6)
2

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MUN5312DW1T1 Summary of contents

Page 1

MUN5311DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series ...

Page 2

... ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device Package MUN5311DW1T1G SOT−363 (Pb−Free) MUN5312DW1T1G SOT−363 (Pb−Free) MUN5313DW1T1G SOT−363 (Pb−Free) MUN5314DW1T1G SOT−363 (Pb−Free) MUN5315DW1T1G SOT−363 (Pb−Free) MUN5316DW1T1G SOT−363 (Pb−Free) MUN5330DW1T1G SOT−363 (Pb−Free) MUN5331DW1T1G SOT−363 (Pb−Free) MUN5332DW1T1G SOT− ...

Page 3

... Collector-Base Breakdown Voltage ( mA Collector-Emitter Breakdown Voltage (Note Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% and Q , − minus sign for Q (PNP) omitted Symbol = CBO = CEO MUN5311DW1T1G I EBO MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1 G MUN5332DW1T1G MUN5333DW1T1 G MUN5334DW1T1G MUN5335DW1T1G = 0) V (BR)CBO E = 2.0 mA (BR)CEO http://onsemi ...

Page 4

... MUN5315DW1T1G MUN5316DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G V OL MUN5311DW1T1G MUN5312DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5313DW1T1G V OH MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5330DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5331DW1T1G MUN5332DW1T1G http://onsemi.com 4 Min Typ Max Unit 35 60 − 60 100 − ...

Page 5

... ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q A Characteristic ON CHARACTERISTICS (Note 4) Input Resistor Resistor Ratio MUN5311DW1T1G/MUN5312DW1T1G/MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G/MUN5316DW1T1G MUN5330DW1T1G/MUN5331DW1T1G/MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 300 250 200 150 100 50 0 −50 and Q , − minus sign for Q ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 8

... TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 14. Output Capacitance 100 0.1 0 1000 25°C 75°C 100 100 MHz 25° 0.1 0.01 0.001 Figure 15. Output Current versus Input Voltage = 0 ...

Page 9

... TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat REVERSE BIAS VOLTAGE (VOLTS) R Figure 19. Output Capacitance 100 0.1 0 Figure 21. Input Voltage versus Output Current 1000 25°C 100 75° 100 75° MHz 25° 0.1 0.01 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat ...

Page 15

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 47. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 16

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat ...

Page 17

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 57. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 18

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 62. V versus I CE(sat) 100 75°C 10 25°C 1 ...

Page 19

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 66. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 20

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 71. V versus I CE(sat ...

Page 21

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 76. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

Page 22

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 81. V versus I CE(sat ...

Page 23

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 86. V versus I CE(sat ...

Page 24

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 91. V versus I CE(sat) 4 3.5 3 2.5 2 ...

Page 25

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G PNP TRANSISTOR 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 96. V versus I CE(sat ...

Page 26

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 101. V CE(sat) 3.5 3 2.5 2 1.5 1 ...

Page 27

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G PNP TRANSISTOR 0.1 75°C −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 106. V CE(sat) 1000 100 ...

Page 28

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 108. V CE(sat ...

Page 29

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 113. V CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 30

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G NPN TRANSISTOR 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 118. V CE(sat) 1.2 1.0 0.8 0.6 0.4 0 ...

Page 31

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G PNP TRANSISTOR −25° 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 123. V CE(sat) 5 4.5 4 3.5 3 2.5 2 1.5 ...

Page 32

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 128. V CE(sat) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ...

Page 33

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G PNP TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 133. V CE(sat) 5 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 34

... SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: ...

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