DSS5240T-7 Diodes Inc, DSS5240T-7 Datasheet - Page 2

• Manufacturer Part Number: DSS5240T-7
• Description: TRANS BIPO PNP 40V 2A SOT-23
• Manufacturer: Diodes Inc

Specifications of DSS5240T-7

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 210 @ 1A, 2V
• Power - Max: 600mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 600 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DSS5240TDITR

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
DSS5240T
Document number: DS31591 Rev. 2 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
800
700
600
500
400
300
200
100
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
R
25
θJA
T , AMBIENT TEMPERATURE ( C)
Characteristic
A
= 209°C/W
50
75
@T
A
100
= 25°C unless otherwise specified
°
125
150
V
V
V
Symbol
V
R
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
I
BE(ON)
I
www.diodes.com
C
h
CBO
EBO
f
FE
T
ob
2 of 4
Min
300
260
210
100
100
-40
-40
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Typ
45
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
-V , COLLECTOR-EMITTER VOLTAGE (V)
1
CE
-0.75
-100
-100
-100
-110
-225
-225
-350
Max
-1.1
220
2
-50
28
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
3
MHz
Unit
mΩ
nA
mV
μA
nA
pF
⎯
V
V
V
V
V
4
5
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
I
V
V
f = 100MHz
V
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
= -100μA
= -10mA
= -100μA
= -100mA, I
= -500mA, I
= -750mA, I
= -1A, I
= -2A, I
= -500mA, I
= -2A, I
= -30V, I
= -30V, I
= -4V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -10V, I
= -10V, f = 1MHz
6
I = -3mA
I = -5mA
I = -4mA
I = -2mA
I = -1mA
B
B
B
B
B
Test Conditions
B
B
B
7
= -50mA
= -200mA
= -200mA
C
C
C
C
C
C
E
E
C
= 0
= -0.1A
= -0.5A
= -1A
= -2A
= -100mA
B
B
B
B
= 0
= 0, T
DSS5240T
= -100mA,
8
= -1mA
= -50mA
= -15mA
= -50mA
© Diodes Incorporated
November 2008
9 10
A
= 150°C