2SB1030A Panasonic - SSG, 2SB1030A Datasheet
2SB1030A
Manufacturer Part Number
2SB1030A
Description
TRANS PNP AF AMP 50V 500MA NEW S
Manufacturer
Panasonic - SSG
Datasheet
1.2SB1030A.pdf
(3 pages)
Specifications of 2SB1030A
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
600mV @ 30mA, 300mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
85 @ 150mA, 10V
Power - Max
300mW
Frequency - Transition
120MHz
Mounting Type
Through Hole
Package / Case
NS-B1
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
2SB1030A-(TA)
2SB1030A0A
2SB1030ATB
2SB1030A0A
2SB1030ATB
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1030A-R
Manufacturer:
PANASONIC
Quantity:
28 000
Company:
Part Number:
2SB1030A-S
Manufacturer:
PANASONIC
Quantity:
13 652
Transistors
2SB1030, 2SB1030A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• Optimum for high-density mounting
• Allowing supply with the radial taping
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SB1030
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-Emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * : Rank classification
Rank
Parameter
h
Parameter
FE1
85 to 170
2SB1030
2SB1030A
2SB1030A
2SB1030
2SB1030A
2SB1030
2SB1030A
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
h
I
T
V
V
V
CBO
CEO
EBO
a
CP
120 to 240
I
I
h
C
stg
CE(sat)
C
C
FE1
CBO
CEO
j
f
CBO
CEO
EBO
FE2
= 25°C
T
ob
*
R
−55 to +150
Rating
I
I
I
V
V
V
V
I
V
V
C
C
E
C
− 0.5
−30
−60
−25
−50
300
150
CB
CB
CE
CE
CE
CB
−7
−1
= −10 µA, I
= −10 µA, I
= −2 mA, I
= −300 mA, I
SJC00065BED
= −20 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
= −10 V, I
170 to 340
S
Conditions
Unit
mW
B
°C
°C
C
E
V
V
V
A
A
E
B
C
C
E
E
= 0
= 0
= 0
B
= 50 mA, f = 200 MHz
= 0
= 0
= −150 mA
= −500 mA
= 0, f = 1 MHz
= −30 mA
0.45
0.75 max.
+0.20
–0.10
1
(2.5) (2.5)
Min
−30
−60
−25
−50
−7
85
40
4.0
2
±0.2
− 0.35 − 0.60
3
Typ
120
3.5
2.0
±0.2
− 0.1
Max
15.0
340
−1
NS-B1 Package
0.7
1: Emitter
2: Collector
3: Base
0.45
±0.1
Unit: mm
+0.20
–0.10
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2SB1030A Summary of contents
Page 1
... Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping ■ Absolute Maximum Ratings T Parameter 2SB1030 Collector-base voltage (Emitter open) 2SB1030A Collector-emitter voltage 2SB1030 ...
Page 2
... 500 400 300 200 100 120 160 ( °C ) Ambient temperature T a CE(sat) C −100 = −10 = 75° 25°C −1 −25°C − 0.1 − 0.01 − 0.01 − 0.1 −1 − Collector current I C MHz = 25° −1 −10 − ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...