ZXTN25020DFLTA Diodes Zetex, ZXTN25020DFLTA Datasheet

TRANSISTOR NPN 20V 2A SOT23-3

ZXTN25020DFLTA

Manufacturer Part Number
ZXTN25020DFLTA
Description
TRANSISTOR NPN 20V 2A SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTN25020DFLTA

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
270mV @ 450mA, 4.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 10mA, 2V
Power - Max
350mW
Frequency - Transition
215MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
ZXTN25020DFLTR
ZXTN25020DFL
20V, SOT23, NPN low power transistor
Summary
BV
BV
BV
I
I
V
R
P
Complementary part number ZXTP25020DFL
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
Applications
Ordering information
Device marking
1A1
Issue 4 - January 2007
© Zetex Semiconductors plc 2007
C(cont)
CM
Device
ZXTN25020DFLTA
D
CE(sat)
CE(sat)
CEX
CEO
ECO
High peak current
Low saturation voltage
100V forward blocking voltage
MOSFET and IGBT gate driving
DC-DC conversion
LED driving
Interface between low voltage IC's and loads
= 350mW
= 8A
> 100V
> 20V
> 5V
= 2A
= 55m
< 70mV @ 1A
Reel size
(inches)
7
Tape width
(mm)
8
1
Quantity per reel
3,000
C
Pinout - top view
B
www.zetex.com
E
C
E
B

Related parts for ZXTN25020DFLTA

ZXTN25020DFLTA Summary of contents

Page 1

... MOSFET and IGBT gate driving • DC-DC conversion • LED driving • Interface between low voltage IC's and loads Ordering information Device Reel size (inches) ZXTN25020DFLTA 7 Device marking 1A1 Issue 4 - January 2007 © Zetex Semiconductors plc 2007 Tape width Quantity per reel (mm) 8 3,000 ...

Page 2

Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current Base current Peak pulse current Power dissipation at T =25°C amb Linear derating factor Operating and storage temperature range ...

Page 3

Characteristics Issue 4 - January 2007 © Zetex Semiconductors plc 2007 ZXTN25020DFL 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current ...

Page 5

Typical characteristics Issue 4 - January 2007 © Zetex Semiconductors plc 2007 ZXTN25020DFL 5 www.zetex.com ...

Page 6

Package outline - SOT23 leads Dim. Millimeters Min. Max. A 2.67 3.05 B 1.20 1. 1.10 D 0.37 0.53 F 0.085 0.15 G 1.90 NOM Note: Controlling dimensions are in millimeters. ...

Page 7

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

Page 8

Issue 4 - January 2007 © Zetex Semiconductors plc 2007 ZXTN25020DFL 8 www.zetex.com ...

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