TRANS PNP 150VCEO 50MA SSMINI-3

2SB1463GRL

Manufacturer Part Number2SB1463GRL
DescriptionTRANS PNP 150VCEO 50MA SSMINI-3
ManufacturerPanasonic - SSG
2SB1463GRL datasheet
 

Specifications of 2SB1463GRL

Transistor TypePNPCurrent - Collector (ic) (max)50mA
Voltage - Collector Emitter Breakdown (max)150VVce Saturation (max) @ Ib, Ic1V @ 3mA, 30mA
Dc Current Gain (hfe) (min) @ Ic, Vce130 @ 10mA, 5VPower - Max125mW
Frequency - Transition200MHzMounting TypeSurface Mount
Package / CaseSS Mini 3PLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names2SB1463GRLTR
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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1463G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC2440G
■ Features
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
a
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
*
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
R
h
130 to 220
FE
Publication date: May 2007
CEO
= 25°C
a
Rating
Unit
−150
V
V
CBO
−150
V
V
CEO
−5
V
V
EBO
−50
I
mA
C
−100
I
mA
CP
P
125
mW
C
°C
T
125
j
−55 to +125
°C
T
stg
= 25°C ± 3°C
Symbol
Conditions
= −100 µA, I
= 0
V
I
CEO
C
B
= −10 µA, I
= 0
V
I
EBO
E
C
= −100 V, I
= 0
I
V
CBO
CB
E
= −5 V, I
= −10 mA
h
V
FE
CE
C
= −30 mA, I
= −3 mA
V
I
CE(sat)
C
B
= −10 V, I
= 10 mA, f = 200 MHz
f
V
T
CB
E
= −10 V, I
= 0, f = 1 MHz
C
V
ob
CB
E
= −10 V, I
= −1 mA, G
NV
V
CE
C
V
= 100 kΩ, Function = FLAT
R
g
S
185 to 330
SJC00388AED
■ Package
• Code
SSMini3-F3
• Marking Symbol: I
• Pin Name
1. Base
2. Emitter
3. Collector
Min
Typ
Max
Unit
−150
V
−5
V
−1
µA
130
330
−1
V
200
MHz
4
pF
= 80 dB
150
mV
1