2SB1463GRL Panasonic - SSG, 2SB1463GRL Datasheet
2SB1463GRL
Manufacturer Part Number
2SB1463GRL
Description
TRANS PNP 150VCEO 50MA SSMINI-3
Manufacturer
Panasonic - SSG
Datasheet
1.2SB1463GRL.pdf
(4 pages)
Specifications of 2SB1463GRL
Transistor Type
PNP
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
1V @ 3mA, 30mA
Dc Current Gain (hfe) (min) @ Ic, Vce
130 @ 10mA, 5V
Power - Max
125mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SS Mini 3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SB1463GRLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1463GRL+
Manufacturer:
VISHAY
Quantity:
3 423
Transistors
2SB1463G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC2440G
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
automatic insertion through the tape packing.
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
This product complies with the RoHS Directive (EU 2002/95/EC).
130 to 220
*
R
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
I
T
CBO
CEO
EBO
V
V
a
CP
185 to 330
I
C
stg
CE(sat)
C
NV
C
h
j
CBO
f
CEO
EBO
= 25°C
FE
T
ob
S
−55 to +125
CEO
Rating
I
I
V
V
I
V
V
V
R
C
E
C
−150
−150
−100
−50
125
125
g
CB
CE
CB
CB
CE
−5
= −100 µA, I
= −10 µA, I
= −30 mA, I
= 100 kΩ, Function = FLAT
SJC00388AED
= −5 V, I
= −10 V, I
= −10 V, I
= −100 V, I
= −10 V, I
Conditions
Unit
mW
mA
mA
C
°C
°C
C
V
V
V
E
B
C
E
B
= −10 mA
= 0
E
= 10 mA, f = 200 MHz
= −3 mA
= 0, f = 1 MHz
= −1 mA, G
= 0
= 0
V
= 80 dB
■ Package
• Code
• Marking Symbol: I
• Pin Name
SSMini3-F3
1. Base
2. Emitter
3. Collector
−150
Min
130
−5
Typ
200
150
4
Max
330
−1
−1
MHz
Unit
mV
µA
pF
V
V
V
1
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