DXT2014P5-13 Diodes Zetex, DXT2014P5-13 Datasheet - Page 4

• Manufacturer Part Number: DXT2014P5-13
• Description: TRANS PNP 140V 4A POWERDI5
• Manufacturer: Diodes Zetex

Specifications of DXT2014P5-13

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 140V
• Vce Saturation (max) @ Ib, Ic: 360mV @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1A, 5V
• Power - Max: 3.2W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: PowerDI™ 5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: DXT2014P5-13TR

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
DC Current Gain (Note 7)
Transition Frequency
Output Capacitance
Switching Times
Notes:
PowerDI is a registered trademark of Diodes Incorporated.
DXT2014P5
Document number: DS32009 Rev. 2 - 2
7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
R≤1kΩ
V
(BR)CBO
(BR)CEO
(BR)EBO
I
C
I
I
CE(sat)
BE(sat)
BE(on)
h
www.diodes.com
CBO
CER
EBO
t
t
f
obo
on
off
FE
T
4 of 7
-180
-140
Min
-7.0
100
100
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-200
-160
-275
-940
-830
Typ
-8.0
225
200
100
120
636
-40
-55
-85
<1
<1
<1
⎯
⎯
33
42
5
-1040
-120
-360
-930
Max
-0.5
-0.5
300
-20
-20
-10
-60
-80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
MHz
mV
mV
mV
nA
μA
nA
μA
nA
pF
⎯
ns
ns
V
V
V
I
I
I
V
V
V
V
V
I
I
I
I
I
V
V
V
V
V
V
f = 50MHz
V
V
I
C
C
E
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
CC
= -100μA
= -0.1A, I
= -0.5A, I
= -3A, I
= -100μA
= -10mA
= -1A, I
= -3A, I
= -I
= -10V, I
= -150V
= -150V, T
= -150V
= -150V, T
= -6V
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, f = 1MHz
= -50V, I
B2
= -100mA
B
B
B
Test Condition
= -300mA
B
B
= -100mA
= -300mA
C
C
C
C
C
C
C
= -5mA
= -50mA
= -10mA
= -1A
= -3A
= -3A
= -10A
DXT2014P5
= -100mA,
amb
amb
= 1A,
= 100 °C
= 100 °C
© Diodes Incorporated
March 2010