FZT857TA Diodes Zetex, FZT857TA Datasheet

TRANS NPN 300V 3500MA SOT-223

FZT857TA

Manufacturer Part Number
FZT857TA
Description
TRANS NPN 300V 3500MA SOT-223
Manufacturer
Diodes Zetex
Datasheet

Specifications of FZT857TA

Transistor Type
NPN
Current - Collector (ic) (max)
3.5A
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
345mV @ 600mA, 3.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 500mA, 10V
Power - Max
3W
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
300V
Collector-base Voltage(max)
350V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
3.5A
Dc Current Gain (min)
100
Power Dissipation
3W
Frequency (max)
80MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Other names
FZT857TR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FZT857TA
Manufacturer:
ZETEX
Quantity:
2 346
Part Number:
FZT857TA
Manufacturer:
Diodes/Zetex
Quantity:
29 522
Part Number:
FZT857TA
Manufacturer:
DIODES
Quantity:
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FZT857TA
Manufacturer:
DIODES/美台
Quantity:
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Part Number:
FZT857TA
0
Company:
Part Number:
FZT857TA
Quantity:
5 000
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 5 - AUGUST 2003
FEATURES
*
*
*
*
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
ABSOLUTE MAXIMUM RATINGS.
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches square.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
Up to 3.5 Amps continuous collector current, up to 5 Amp peak
V
Very low saturation voltage
Excellent h
CEO
= 300V
FE
specified up to 3 Amps
amb
=25°C
FZT857
FZT957
SYMBOL
V
V
V
I
I
P
T
CM
C
tot
j
CBO
CEO
EBO
:T
stg
-55 to +150
VALUE
350
300
3.5
6
5
3
C
FZT857
B
UNIT
W
°C
A
A
V
V
V
C
E

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FZT857TA Summary of contents

Page 1

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR ISSUE 5 - AUGUST 2003 FEATURES * Up to 3.5 Amps continuous collector current Amp peak * V = 300V CEO * Very low saturation voltage * Excellent h ...

Page 2

ELECTRICAL CHARACTERISTICS (at T PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ...

Page 3

FZT857 TYPICAL CHARACTERISTICS 0.8 0 0.2 0 0.001 0.01 0.1 - Collector Current (Amps CE(sat) C 2 ...

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