ZX5T851A Diodes Zetex, ZX5T851A Datasheet - Page 4

• Manufacturer Part Number: ZX5T851A
• Description: TRANSISTOR NPN 60V 4500MA TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZX5T851A

• Transistor Type: NPN
• Current - Collector (ic) (max): 4.5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 210mV @ 200mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 1V
• Power - Max: 1W
• Frequency - Transition: 130MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZX5T851A
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R 1k
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
FE
OBO
CBO
CER
CEO
EBO
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
150
150
100
100
60
55
20
7
TYP.
190
190
950
840
200
130
170
200
105
760
8.1
80
18
31
42
40
45
95
40
2%.
MAX. UNIT CONDITIONS
1050
950
130
210
300
0.5
0.5
20
20
10
30
55
65
MHz I
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
V
V
V
V
A
A
ISSUE 1 - NOVEMBER 2003
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=1A, I
=1A, I
=2A, I
=5A, I
=2A, V
=5A, V
=10A, V
=100 A
=1 A, RB 1k
=10mA*
=100 A
=100mA, I
=4A, I
=4A, V
=10mA, V
=100mA, V
=1A, V
=I
=120V, T
=120V, T
=6V
=120V
=120V
=10V, f=1MHz*
B2
B
B
B
B
=100mA
B
CE
CE
=100mA*
=50mA*
=50mA*
=200mA*
CE
CC
CE
=200mA*
=1V*
=1V*
amb
amb
=1V*
=10V,
=1V*
CE
B
CE
=5mA*
=100 C
=100 C
=1V*
=10V