TRANSISTOR NPN 50V 0.15A SC-72

 

2SC1740STPR

Manufacturer Part Number2SC1740STPR
DescriptionTRANSISTOR NPN 50V 0.15A SC-72
ManufacturerRohm Semiconductor
2SC1740STPR datasheet
 

Specifications of 2SC1740STPR

Transistor TypeNPNCurrent - Collector (ic) (max)150mA
Voltage - Collector Emitter Breakdown (max)50VVce Saturation (max) @ Ib, Ic400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce180 @ 1mA, 6VPower - Max300mW
Frequency - Transition180MHzMounting TypeThrough Hole
Package / CaseSC-72-3, SPTConfigurationSingle
Transistor PolarityNPNMounting StyleThrough Hole
Collector- Emitter Voltage Vceo Max50 VEmitter- Base Voltage Vebo7 V
Continuous Collector Current0.15 AMaximum Dc Collector Current0.15 A
Power Dissipation0.3 WMaximum Operating Frequency180 MHz
Maximum Operating Temperature+ 150 CDc Collector/base Gain Hfe Min120
Gain Bandwidth Product Ft180 MHzLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names2SC1740STPRTB
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General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029 / 2SA933AS.
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
2SC1740S
Junction temperature
Storage temperature
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
BV
Collector-emitter breakdown voltage
BV
BV
Emitter-base breakdown voltage
Collector cutoff current
I
CBO
I
Emitter cutoff current
EBO
DC current transfer ratio
h
FE
V
Collector-emitter saturation voltage
CE(sat)
f
Transition frequency
Cob
Output capacitance
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2009 ROHM Co., Ltd. All rights reserved.
c
Dimensions (Unit : mm)
2SC2412K
1.6
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3
(1) Emitter
EIAJ : SC-59
(2) Base
JEDEC : SOT-346
(3) Collector
Abbreviated symbol: B*
2SC5658
1.2
0.2
0.8
0.2
(2)
(3)
(1)
0.15Max.
(1) Base
ROHM : VMT3
(2) Emitter
(3) Collector
Abbreviated symbol: B*
* Denotes h
FE
Symbol
Limits
V
60
CBO
V
50
CEO
V
7
EBO
I
0.15
C
0.2
P
0.15
C
0.3
Tj
150
−55 to +150
Tstg
Min.
Typ.
Max.
Unit
60
V
I
=50μA
CBO
C
50
V
I
=1mA
CEO
C
7
V
I
=50μA
EBO
E
μA
0.1
V
=60V
CB
μA
0.1
V
=7V
EB
120
390
V
=6V, I
CE
0.4
V
I
/I
C
B
180
MHz
V
=12V, I
T
CE
2
3.5
pF
V
=12V, I
CE
1/3
2SC4081
2SC4617
( 1 )
( 2 )
( 3 )
1.25
0.8
2.1
1.6
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
(1) Emitter
ROHM : EMT3
EIAJ : SC-70
(2) Base
EIAJ : SC-75A
JEDEC : SOT-323
(3) Collector
JEDEC : SOT-416
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC1740S
4 ± 0.2
+0.15
0.45
− 0.05
2.5 +0.4
− 0.1
0.5
5
(1) (2) (3)
(1) Emitter
ROHM : SPT
(2) Collector
EIAJ : SC-72
(3) Base
Unit
V
V
V
A
W
°C
°C
Conditions
=1mA
C
=50mA/5mA
=−2mA, f=100MHz
E
=0A, f=1MHz
E
2009.12 - Rev.C
(1) Emitter
(2) Base
(3) Collector
2 ± 0.2
+0.15
0.45
− 0.05

2SC1740STPR Summary of contents

  • Page 1

    General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. Structure Epitaxial planar type NPN silicon transistor ...

  • Page 2

    FE Package Code Basic ordering h unit (pieces) Type FE 2SC2412K QR 2SC4081 QR 2SC4617 QR 2SC5658 QR 2SC1740S QR h values are classified as follows : ...

  • Page 3

    0.2 Ta=100°C 0.1 25°C −55°C 0.05 0.02 0.01 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.7 ...

  • Page 4

    No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...