2SC4725TLP Rohm Semiconductor, 2SC4725TLP Datasheet - Page 2

• Manufacturer Part Number: 2SC4725TLP
• Description: TRANS NPN 20V 50MA SOT-416
• Manufacturer: Rohm Semiconductor

Specifications of 2SC4725TLP

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 10mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 1.5GHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 50 mA
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 1500 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 1500 MHZ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SC4725TLP; 2SC4725TLPTR

Electrical characteristic curves
Fig.4 Gain bandwidth product vs. emitter current
○
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
c
www.rohm.com
Fig.1 DC current gain vs. collector current
Fig.7 Insertion gain vs. collector current
500
200
100
2009 ROHM Co., Ltd. All rights reserved.
25
20
15
10
50
20
10
5000
2000
1000
5
0
500
200
100
0.5
0.1 0.2
−0.1 −0.2
COLLECTOR CURRENT : Ic (mA)
1
COLLECTOR CURRENT : I
EMITTER CURRENT : I
0.5
−0.5 −1 −2
2
1
2
5
10
5
−5 −10 −20
Ta=25°C
V
f=200MHz
10 20
CE
E
20
Ta=25°C
V
C
(mA)
=12V
Ta=25°C
V
CE
(mA)
CE
=10V
=10V
50
50
−50
Fig.2 Collector-emitter saturation voltage
Fig.8 Insertion gain vs. collector voltage
500
200
100
50
20
10
30
25
20
15
10
5
0
COLLECTOR TO EMITTER VOLTAGE : V
0.1 0.2
0
Fig.5 Collector to base time constance
50
20
10
vs. collector current
5
2
1
0.1 0.2
COLLECTOR CURRENT : I
2
vs. collector current
COLLECTOR CURRENT : I
0.5
0.5
4
2/3
1
1
2
6
2
5
8
5
Ta=25°C
I
f=200MHz
10 20
C
=2mA
Ta=25°C
I
C
C
(mA)
Ta=25°C
V
f=31.8MHz
10 20
/I
10
B
CE
C
=5
(mA)
=10V
CE
12
(V)
50
50
Fig.3 Capacitance vs. reverse bias voltage
5.0
2.0
1.0
0.5
0.2
0.1
Fig.9 Noise factor vs. collector current
0.1 0.2
25
20
15
10
20
10
5
0
0
0.1
0.1 0.2
COLLECTOR TO BASE VOLTAGE : V
Fig.6 Insertion gain vs. frequency
0.2
COLLECTOR CURRENT : I
0.5
0.5
FREQUENCY : f (GHz)
2009.12 - Rev.C
0.5
1
1
2
2
Data Sheet
1
5
2
5
Cre
Cob
10 20
Ta=25°C
V
I
Ta=25°C
f=1MHz
I
Ta=25°C
V
f=200MHz
10 20
C
E
CE
=10mA
=0A
CE
C
=10V
(mA)
=12V
5
CB
(V)
50
10
50