2SC4672T100Q Rohm Semiconductor, 2SC4672T100Q Datasheet

TRANS NPN 50V 3A SOT-89

2SC4672T100Q

Manufacturer Part Number
2SC4672T100Q
Description
TRANS NPN 50V 3A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SC4672T100Q

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
350mV @ 50mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
500mW
Frequency - Transition
210MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
3 A
Maximum Dc Collector Current
3 A
Power Dissipation
0.5 W
Maximum Operating Frequency
210 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
210 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC4672T100Q
2SC4672T100QTR

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Transistors
Low Frequency Transistor (50V, 3A)
2SC4672
1) Low saturation voltage, typically V
2) Excellent DC current gain characteristics.
3) Complements the 2SA1797.
h
∗Measured using pulse current.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms
∗2 40
FE
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Features
Packaging specifications and h
Denotes h
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
Basic ordering unit (pieces)
values are classified as follows:
Item
h
×
FE
40
×
FE
t
Package
0.7mm Ceramic board
Marking
Parameter
Code
Type
h
Parameter
FE
82 to 180
P
120 to 270
2SC4672
MPT3
Q
T100
1000
Symbol
PQ
DK
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
FE
CE (sat)
Symbol
V
BV
BV
BV
Cob
I
I
CE(sat)
h
h
CBO
EBO
f
FE
FE
CBO
CEO
T
EBO
1
2
−55 to +150
=0.1V at I
Limits
150
0.5
60
50
6
3
6
2
Min.
60
50
82
45
6
∗2
C
/I
B
0.13
=1A /50mA.
Typ.
210
25
A (Pulse)
A (DC)
Unit
°C
°C
W
V
V
V
Max.
0.35
0.1
0.1
270
∗1
MHz
Unit
µA
µA
pF
V
V
V
V
I
I
I
V
V
I
V
V
V
V
C
C
E
C
CB
EB
CE
CE
CE
CB
=50µA
=1mA
=50µA
/I
B
=5V
=60V
=2V, I
=2V, I
=2V, I
=10V, I
=1A/50mA
C
C
E
=0.5A
=1.5A
=−0.5A, f=100MHz
E
=0A, f=1MHz
Conditions
Rev.C
2SC4672
1/2

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2SC4672T100Q Summary of contents

Page 1

Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically V CE (sat) 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO ...

Page 2

Transistors Electrical characteristics curves 10 = − Ta=25° 0.5 0.2 Ta=100°C 0.1 Ta= −40°C 0.05 0.02 0. 0.2 0.4 0.6 0.8 1.0 1.2 (V) BASE TO EMITTER VOLTAGE : V BE ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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