2SD1760TLR Rohm Semiconductor, 2SD1760TLR Datasheet
2SD1760TLR
Manufacturer Part Number
2SD1760TLR
Description
TRANS NPN 50V 3A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet
1.2SD1760TLR.pdf
(3 pages)
Specifications of 2SD1760TLR
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
1V @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 500mA, 3V
Power - Max
15W
Frequency - Transition
90MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Bce Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
1W
Dc Collector Current
2A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-428
No. Of Pins
3
Transistor Polarity
NPN
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
2SD1760TLR
2SD1760TLRTR
2SD1760TLRTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1760TLR
Manufacturer:
Infineon
Quantity:
20 500
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
! ! ! ! Features
1) Low V
2) Complements the 2SB1184 / 2SB1243.
! ! ! ! Structure
Epitaxial planar type
NPN silicon transistor
! ! ! ! Absolute maximum ratings (Ta=25°C)
∗1 Single pulse, P
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
V
(I
C
CE(sat)
/I
B
= 2A / 0.2A)
CE(sat)
Parameter
= 0.5V (Typ.)
.
W
=100ms
2SD1760
2SD1864
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
−55~+150
Limits
150
4.5
60
50
15
5
3
1
! ! ! ! External dimensions (Units : mm)
2
or larger.
2SD1760
0.75
ROHM : CPT3
EIAJ : SC-63
2.3±0.2
0.9
(1)
6.5±0.2
5.1
W (Tc=25°C)
(2)
+0.2
−0.1
A (Pulse)
2.3±0.2
A (DC)
(3)
Unit
0.65±0.1
°C
°C
W
V
V
V
C0.5
∗1
∗2
(1) Base
(2) Collector
(3) Emitter
0.5±0.1
0.55±0.1
1.0±0.2
2.3
+0.2
−0.1
2SD1760 / 2SD1864
0.65Max.
2SD1864
(1)
ROHM : ATV
2.54 2.54
6.8
(2)
±
0.2
(3)
0.5
±
0.1
1.05
2.5
±
(1) Emitter
(2) Collector
(3) Base
0.2
0.45
±
0.1
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2SD1760TLR Summary of contents
Page 1
Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 ! ! ! ! Features 1) Low V . CE(sat 0.5V (Typ.) CE(sat 0.2A Complements the 2SB1184 / 2SB1243 ...
Page 2
Transistors ! ! ! ! Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BV Collector-emitter breakdown voltage BV Emitter-base breakdown voltage BV Collector cutoff current I Emitter cutoff current Collector-emitter saturation voltage V CE (sat) DC current transfer ratio Transition ...
Page 3
Transistors −25°C 1 0.5 100° (sat) 25°C 0.2 0 100°C −25°C 0.05 25°C V 0.02 CE (sat) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 ...