MMBT2907AWT1G ON Semiconductor, MMBT2907AWT1G Datasheet

TRANS GP SS PNP 60V SOT323

MMBT2907AWT1G

Manufacturer Part Number
MMBT2907AWT1G
Description
TRANS GP SS PNP 60V SOT323
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT2907AWT1G

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
150mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
150 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
75 at 0.1 mA at 10 V
Minimum Operating Temperature
- 55 C
Collector Emitter Voltage V(br)ceo
-60V
Transition Frequency Typ Ft
200MHz
Power Dissipation Pd
150mW
Dc Collector Current
-600mA
Dc Current Gain Hfe
200
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT2907AWT1GOSTR

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MMBT2907AWT1G
General Purpose Transistor
PNP Silicon
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
These transistors are designed for general purpose amplifier
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
A
Characteristic
= 25°C
Rating
Symbol
Symbol
T
V
V
V
R
J
P
, T
CEO
CBO
EBO
I
qJA
C
D
stg
−55 to
Value
−600
+150
−5.0
Max
−60
−60
150
833
1
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
*Date Code orientation may vary depending upon
†For information on tape and reel specifications,
MMBT2907AWT1G
manufacturing location.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
1
20
M
G
ORDERING INFORMATION
2
MARKING DIAGRAM
BASE
http://onsemi.com
1
3
= Specific Device Code
= Date Code
= Pb−Free Package
1
(Pb−Free)
Package
COLLECTOR
SC−70
20 MG
EMITTER
Publication Order Number:
SC −70/SOT−323
G
CASE 419 −04
3
2
STYLE 3
MMBT2907AWT1/D
3000 Tape & Reel
Shipping

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MMBT2907AWT1G Summary of contents

Page 1

... −55 to °C J stg +150 *Date Code orientation may vary depending upon manufacturing location. MMBT2907AWT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note −10 mAdc Collector −Base Breakdown Voltage (I = −10 mAdc Emitter −Base Breakdown Voltage (I = −10 ...

Page 3

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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