2N3906RLRAG ON Semiconductor, 2N3906RLRAG Datasheet

TRANS PNP GP SS 200MA 40V TO92

2N3906RLRAG

Manufacturer Part Number
2N3906RLRAG
Description
TRANS PNP GP SS 200MA 40V TO92
Manufacturer
ON Semiconductor
Type
General Purposer
Datasheets

Specifications of 2N3906RLRAG

Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
625mW
Frequency - Transition
250MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Collector
200 mA
Current, Gain
30
Frequency
250 MHz
Package Type
TO-92
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
40 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
5 V
Dc
0608
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
2N3906RLRAGOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3906RLRAG
Manufacturer:
ON Semiconductor
Quantity:
1 150
2N3906
General Purpose
Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Total Power Dissipation @ T
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Pb−Free Packages are Available*
Derate above 25°C
Derate above 25°C
Characteristic
Rating
A
A
C
= 60°C
= 25°C
= 25°C
(Note 1)
Symbol
Symbol
T
V
V
V
R
R
J
P
P
P
CEO
CBO
EBO
, T
I
qJA
qJC
C
D
D
D
stg
−55 to +150
Value
Max
83.3
200
625
250
200
5.0
5.0
1.5
40
40
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
CASE 29
STYLE 1
TO−92
(Note: Microdot may be in either location)
ORDERING INFORMATION
A
L
Y
W
G
STRAIGHT LEAD
MARKING DIAGRAM
BASE
http://onsemi.com
BULK PACK
1 2
2
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
3
ALYWG
COLLECTOR
3906
2N
EMITTER
G
Publication Order Number:
3
1
TAPE & REEL
AMMO PACK
BENT LEAD
1
2
3
2N3906/D

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2N3906RLRAG Summary of contents

Page 1

... Recommended Operating Conditions may affect device reliability. 1. Indicates Data in addition to JEDEC Requirements. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 4 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector −Emitter Saturation Voltage Base −Emitter Saturation Voltage ...

Page 3

... ORDERING INFORMATION Device 2N3906 2N3906G 2N3906RL1 2N3906RL1G 2N3906RLRA 2N3906RLRAG 2N3906RLRM 2N3906RLRMG 2N3906RLRP 2N3906RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +0.5 V 10.6 V Figure 1. Delay and Rise Time Equivalent Test Circuit 10 < ...

Page 4

TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 C 5.0 obo C ibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) Figure 3. Capacitance 500 300 200 100 ...

Page 5

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS (V CE 5.0 SOURCE RESISTANCE = 200 1 4.0 SOURCE RESISTANCE = 200 0 3.0 SOURCE RESISTANCE = 2 2.0 ...

Page 6

TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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