2N3904RL1G ON Semiconductor, 2N3904RL1G Datasheet - Page 2

• Manufacturer Part Number: 2N3904RL1G
• Description: TRANS SS NPN GP 40V 200MA TO-92
• Manufacturer: ON Semiconductor

Specifications of 2N3904RL1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2N3904RL1G; 2N3904RL1GOSTR

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Base Cutoff Current (V
Collector Cutoff Current (V
DC Current Gain (Note 2)
(I
(I
(I
(I
(I
Collector −Emitter Saturation Voltage (Note 2)
(I
(I
Base −Emitter Saturation Voltage (Note 2)
(I
(I
Current −Gain − Bandwidth Product
(I
Output Capacitance (V
Input Capacitance (V
Input Impedance
(I
Voltage Feedback Ratio
(I
Small−Signal Current Gain
(I
Output Admittance (I
Noise Figure
(I
Delay Time
Rise Time
Storage Time
Fall Time
C
C
C
C
C
C
C
C
C
C
C
C
C
C
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 100 mAdc, V
B
B
B
B
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 1.0 mAdc)
= 5.0 mAdc
= 1.0 mAdc)
= 5.0 mAdc)
CE
= 1.0 Vdc)
= 1.0 Vdc)
= 20 Vdc, f = 100 MHz)
C
= 5.0 Vdc, R
= 1.0 Vdc)
= 1.0 Vdc)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
EB
= 1.0 Vdc)
= 1.0 mAdc, V
CE
CB
(V
I
(V
I
C
B1
= 0.5 Vdc, I
CC
CC
= 10 mAdc, I
= 30 Vdc, V
= 5.0 Vdc, I
= I
CE
= 3.0 Vdc, V
= 3.0 Vdc, I
B2
= 30 Vdc, V
= 1.0 mAdc)
S
= 1.0 k W, f = 1.0 kHz)
Characteristic
C
E
CE
E
= 0, f = 1.0 MHz)
EB
C
= 10 mAdc, I
B1
= 0, f = 1.0 MHz)
= 10 mAdc, I
C
= 10 Vdc, f = 1.0 kHz)
= 3.0 Vdc)
BE
= 1.0 mAdc)
EB
(T
= 10 mAdc,
A
= 0.5 Vdc,
= 3.0 Vdc)
= 25°C unless otherwise noted)
C
C
= 1.0 mAdc, I
E
= 0)
= 0)
http://onsemi.com
B
= 0)
2
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
C
h
CEX
h
I
h
NF
h
h
BL
f
t
t
obo
t
t
FE
ibo
oe
T
ie
re
fe
d
s
r
f
0.65
Min
100
250
300
100
6.0
1.0
1.0
0.1
0.5
1.0
40
60
20
40
35
70
50
30
60
15
30
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.85
0.95
150
300
200
400
175
200
0.2
0.3
4.0
8.0
8.0
5.0
8.0
6.0
5.0
50
50
10
40
35
35
50
−
−
−
−
−
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
k W
dB
pF
pF
ns
ns
ns
ns
−
−
− 4