MPSA06RLRMG ON Semiconductor, MPSA06RLRMG Datasheet - Page 2

• Manufacturer Part Number: MPSA06RLRMG
• Description: TRANS AMP NPN BIPO 80V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA06RLRMG

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 625mW
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Configuration: Single
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPSA06RLRMG; MPSA06RLRMGOSTR

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain − Bandwidth Product (Note 3)
+10 V
0
T
is defined as the frequency at which |h
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
t
C
E
C
C
C
C
C
C
r
CE
CB
CB
5.0 ms
= 3.0 ns
= 100 mAdc, I
= 1.0 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 100 mAdc, I
= 100 mAdc, V
= 10 mA, V
= 100 mAdc, V
= 60 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
CE
V
in
B
E
E
C
B
CE
B
= 2.0 V, f = 100 MHz)
5.0 mF
= 0)
= 0)
= 0)
CE
CE
CE
= 0)
= 0)
= 10 mAdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc, f = 100 MHz)
−1.0 V
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56*
TURN−ON TIME
100
100
R
Characteristic
B
(T
fe
A
| extrapolates to unity.
V
Figure 1. Switching Time Test Circuits
= 25°C unless otherwise noted)
CC
R
+40 V
L
* C
http://onsemi.com
S
OUTPUT
t 6.0 pF
MPSA05, MPSA55
MPSA06, MPSA56
MPSA05, MPSA55
MPSA06, MPSA56
2
MPSA05
MPSA06
MPSA55
MPSA56
t
r
5.0 ms
= 3.0 ns
V
V
V
Symbol
V
V
in
(BR)CEO
(BR)EBO
I
CE(sat)
I
BE(on)
h
5.0 mF
CES
CBO
f
FE
T
+V
BB
TURN−OFF TIME
100
100
R
B
Min
100
100
100
4.0
60
80
50
−
−
−
−
−
V
CC
Max
0.25
0.1
0.1
0.1
1.2
R
+40 V
−
−
−
−
−
−
−
L
* C
S
OUTPUT
mAdc
mAdc
MHz
t 6.0 pF
Unit
Vdc
Vdc
Vdc
Vdc
−