MPS2907ARLRAG ON Semiconductor, MPS2907ARLRAG Datasheet - Page 2

• Manufacturer Part Number: MPS2907ARLRAG
• Description: TRANS PNP GP SS 60V TO92
• Manufacturer: ON Semiconductor

Specifications of MPS2907ARLRAG

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 625mW
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MPS2907ARLRAGOS; MPS2907ARLRAGOS; MPS2907ARLRAGOSTR

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1) (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
Collector Cutoff Current
Base Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (Note 1)
Base −Emitter Saturation Voltage (Note 1)
Current −Gain − Bandwidth Product (Notes 1 and 2),
Output Capacitance (V
Input Capacitance (V
Turn−On Time
Delay Time
Rise Time
Turn−Off Time
Storage Time
Fall Time
T
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
is defined as the frequency at which |h
C
C
C
C
C
C
C
C
C
C
CB
CB
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −150 mAdc, V
= −500 mAdc, V
= −150 mAdc, I
= −500 mAdc, I
= −150 mAdc, I
= −500 mAdc, I
= −50 mAdc, V
= −50 Vdc, I
= −50 Vdc, I
CE
= −30 Vdc, V
E
E
EB
CE
CE
B
B
B
B
CE
CE
= 0)
= 0, T
CE
CE
CB
= −15 mAdc)
= −50 mAdc)
= −15 mAdc)
= −50 mAdc)
= −2.0 Vdc, I
= −10 Vdc)
= −20 Vdc, f = 100 MHz)
= −10 Vdc)
= −10 Vdc)
= −10 Vdc) (Note 1)
= −10 Vdc) (Note 1)
= −10 Vdc, I
CE
A
= −30 Vdc, V
= 150°C)
EB(off)
Characteristic
E
C
C
= −10 mAdc, I
E
= −0.5 Vdc)
= 0, f = 1.0 MHz)
= −10 mAdc, I
= 0, f = 1.0 MHz)
(T
EB(off)
fe
A
| extrapolates to unity.
= 25°C unless otherwise noted)
I
(V
(V
B1
I
C
= −0.5 Vdc)
CC
B1
CC
= −15 mAdc) (Figures 1 and 5)
= −10 mAdc, I
C
= I
= −6.0 Vdc, I
= −30 Vdc, I
E
= 0)
B2
= 0)
http://onsemi.com
= 15 mAdc) (Figure 2)
B
C
C
= 0)
= −150 mAdc,
= −150 mAdc,
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
I
C
h
CBO
CEX
t
t
I
f
t
obo
on
t
off
t
FE
t
B
ibo
T
d
s
r
f
−5.0
Min
−60
−60
100
100
100
200
75
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.01
Max
−0.4
−1.6
−1.3
−2.6
−50
−10
−50
300
100
8.0
30
45
10
40
80
30
−
−
−
−
−
−
−
−
nAdc
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
ns
ns
ns
ns
ns
−