MPSA42RLRAG ON Semiconductor, MPSA42RLRAG Datasheet - Page 2
MPSA42RLRAG
Manufacturer Part Number
MPSA42RLRAG
Description
TRANS NPN GP SS 500MA 300V TO92
Manufacturer
ON Semiconductor
Datasheet
1.MPSA42RLRAG.pdf
(6 pages)
Specifications of MPSA42RLRAG
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 1mA, 10V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
300V
Collector-base Voltage
300V
Emitter-base Voltage
6V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
25
Power Dissipation
625mW
Frequency (max)
50MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MPSA42RLRAGOS
MPSA42RLRAGOS
MPSA42RLRAGOSTR
MPSA42RLRAGOS
MPSA42RLRAGOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPSA42RLRAG
Manufacturer:
ON
Quantity:
10 000
Company:
Part Number:
MPSA42RLRAG
Manufacturer:
ON Semiconductor
Quantity:
1 350
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Collector−Base Capacitance
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
CB
CB
EB
EB
CB
= 100 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 30 mAdc, V
= 20 mAdc, I
= 20 mAdc, I
= 10 mAdc, V
= 200 Vdc, I
= 160 Vdc, I
= 6.0 Vdc, I
= 4.0 Vdc, I
= 20 Vdc, I
B
B
E
C
B
E
C
C
CE
CE
CE
E
E
CE
= 2.0 mAdc)
= 2.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
= 0)
= 0)
= 0)
= 0)
= 10 Vdc)
= 10 Vdc)
= 20 Vdc, f = 100 MHz)
= 10 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
h
CBO
EBO
C
f
FE
T
cb
Min
300
200
300
200
6.0
25
40
40
50
−
−
−
−
−
−
−
−
−
Max
0.1
0.1
0.1
0.1
0.5
0.4
0.9
3.0
4.0
−
−
−
−
−
−
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−