ZXTS1000E6TA Diodes Zetex, ZXTS1000E6TA Datasheet

TRANS PNP/DIODE SCHOTTKY SOT23-6

ZXTS1000E6TA

Manufacturer Part Number
ZXTS1000E6TA
Description
TRANS PNP/DIODE SCHOTTKY SOT23-6
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTS1000E6TA

Transistor Type
PNP + Diode (Isolated)
Current - Collector (ic) (max)
1.25A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
240mV @ 100mA, 1.25A
Current - Collector Cutoff (max)
10nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 500mA, 2V
Power - Max
885mW
Frequency - Transition
220MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
ZXTS1000E6TR
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
AND SCHOTTKY DIODE
SUMMARY
Transistor: V
Schottky Diode: V
DESCRIPTION
A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded
SOT23 package.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
1000
ISSUE 1 - NOVEMBER 2000
DEVICE
ZXTS1000E6TA
ZXTS1000E6TC
Low Saturation Transistor
High Gain - 300 minimum
Low V
Mobile telecomms, PCMCIA & SCSI
DC-DC Conversion
F
, fast switching Schottky
CEO
=-12V, I
R
REEL SIZE
(inches)
=40V; I
C
= -1.25A
13
7
C
= 0.5A
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
1
3000 units
QUANTITY
PER REEL
10000 units
ZXTS1000E6
SOT23-6
Top View

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ZXTS1000E6TA Summary of contents

Page 1

... Low Saturation Transistor High Gain - 300 minimum Low V , fast switching Schottky F APPLICATIONS Mobile telecomms, PCMCIA & SCSI DC-DC Conversion ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXTS1000E6TA 7 ZXTS1000E6TC 13 DEVICE MARKING 1000 ISSUE 1 - NOVEMBER 2000 TAPE WIDTH QUANTITY (mm) PER REEL 8mm embossed 3000 units ...

Page 2

ZXTS1000E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Transistor Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Schottky Diode Continuous Reverse Voltage Forward Current Non Repetitive Forward Current t 100 s t 10ms Package Power Dissipation at T =25°C amb single die ...

Page 3

TRANSISTOR TYPICAL CHARACTERISTICS 0.4 +25°C 0.3 IC/IB=10 IC/IB=50 IC/IB=100 0.2 0 10m 100m I - Collector Current ( CE(sat) 800 VCE=2V 600 +100°C 400 +25°C -55°C 200 0 1m 10m 100m I - Collector Current (A) ...

Page 4

ZXTS1000E6 ELECTRICAL CHARACTERISTICS (at T PARAMETER TRANSISTOR ELECTRICAL CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current ...

Page 5

DIODE TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2000 ZXTS1000E6 5 ...

Page 6

ZXTS1000E6 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 ...

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