NSS12501UW3T2G ON Semiconductor, NSS12501UW3T2G Datasheet

NSS12501UW3T2G

Manufacturer Part Number

NSS12501UW3T2G

Description

TRANS NPN 12V 7A 3-WDFN

Manufacturer

ON Semiconductor

Datasheet

1.NSS12501UW3T2G.pdf (5 pages)

Specifications of NSS12501UW3T2G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

12V

Vce Saturation (max) @ Ib, Ic

120mV @ 400mA, 4A

Dc Current Gain (hfe) (min) @ Ic, Vce

200 @ 2A, 2V

Power - Max

875mW

Frequency - Transition

150MHz

Mounting Type

Surface Mount

Package / Case

3-VDFN Exposed Pad

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Other names

NSS12501UW3T2GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS12501UW3T2G

Manufacturer:

Quantity:

3 000

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NSS12501UW3T2G

12 V, 7.0 A, Low V

NPN Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU's control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-4 @ 100 mm

2. FR-4 @ 500 mm

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

May, 2007 - Rev. 2

Collector‐Emitter Voltage

Collector‐Base Voltage

Emitter‐Base Voltage

Collector Current - Continuous

Collector Current - Peak

Electrostatic Discharge

Total Device Dissipation, T

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Total Device Dissipation, T

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Thermal Resistance,

Junction-to-Lead #1

Junction and Storage

Temperature Range

ON Semiconductor's e

Typical applications are DC-DC converters and power management

This is a Pb-Free Device

Characteristic

Rating

, 1 oz copper traces.

CE(sat)

= 25°C)

= 25°C

) and high current gain capability. These

PowerEdge family of low V

qJA

qJL

Symbol

(Note 1)

(Note 2)

ESD

(Note 1)

(Note 2)

CEO

CBO

EBO

, T

PowerEdge devices to be

stg

CE(sat)

-55 to

+150

HBM Class 3B

Max

11.8

875

143

6.0

5.0

7.0

1.5

MM Class C

mW/°C

°C/W

CE(sat)

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

NSS12501UW3T2G

NPN LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

EQUIVALENT R

(Note: Microdot may be in either location)

Device

12 VOLTS, 7.0 AMPS

ORDERING INFORMATION

VF = Specific Device Code

MARKING DIAGRAM

http://onsemi.com

BASE

= Date Code

= Pb-Free Package

CE(sat)

VF MG

COLLECTOR

(Pb-Free)

Package

WDFN3

EMITTER

Publication Order Number:

CASE 506AU

DS(on)

TRANSISTOR

WDFN3

NSS12501UW3/D

Tape & Reel

31 mW

Shipping

3000/

†

Related parts for NSS12501UW3T2G

NSS12501UW3T2G Summary of contents

Page 1

... Microdot may be in either location) ORDERING INFORMATION Device Package Shipping WDFN3 3000/ NSS12501UW3T2G (Pb-Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS12501UW3/D † ...

Page 2

... 1.0 MHz) CB SWITCHING CHARACTERISTICS Delay ( 750 mA mA Rise ( 750 mA mA Storage ( 750 mA mA Fall ( 750 mA mA Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. NSS12501UW3T2G (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO CE(sat) V BE(sat) V BE(on Cibo Cobo ...

Page 3

... V CE 0.9 -55 °C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 5. Base Emitter Turn-On Voltage vs. Collector Current NSS12501UW3T2G 0 150° 100 CE(sat 25°C 0.15 0.1 -55 °C 0.05 V CE(sat) 0 1.0 10 0.001 Figure 2. Collector Emitter Saturation Voltage 1 ...

Page 4

... V , EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance 10 1 0.1 Single Pulse Test at T 0.01 0.01 NSS12501UW3T2G 140 C (pF) ibo 130 120 110 100 4.0 5.0 6.0 0 1 100 mS 1.0 S Thermal Limit = 25° ...

Page 5

... LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com NSS12501UW3T2G PACKAGE DIMENSIONS WDFN3 CASE 506AU-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . ...

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