2N4403G ON Semiconductor, 2N4403G Datasheet

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2N4403G

Manufacturer Part Number
2N4403G
Description
TRANS PNP GP 40V 600MA TO-92
Manufacturer
ON Semiconductor
Type
General Purposer
Datasheets

Specifications of 2N4403G

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
30 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
600 mA
Current, Gain
20
Frequency
200 MHz
Package Type
TO-92
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
40 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.75 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N4403G
2N4403GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4403G
Manufacturer:
ON
Quantity:
9 021
Part Number:
2N4403G
Manufacturer:
ON Semiconductor
Quantity:
1 850
Part Number:
2N4403G
Manufacturer:
ON/安森美
Quantity:
20 000
2N4403
General Purpose
Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Pb−Free Packages are Available*
Characteristic
Rating
A
C
Preferred Device
= 25°C
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJC
C
D
D
stg
−55 to +150
Value
Max
83.3
600
625
200
5.0
5.0
1.5
40
40
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
mW
Vdc
Vdc
Vdc
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
CASE 29
STYLE 1
TO−92
(Note: Microdot may be in either location)
2N4403 = Device Code
A
Y
WW
G
ORDERING INFORMATION
STRAIGHT LEAD
MARKING DIAGRAM
BULK PACK
http://onsemi.com
BASE
1 2
2
3
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AYWW G
4403
COLLECTOR
2N
G
Publication Order Number:
EMITTER
3
1
TAPE & REEL
AMMO PACK
BENT LEAD
1
2
3
2N4403/D

Related parts for 2N4403G

2N4403G Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − ...

Page 2

... Fall Time B1 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device 2N4403 2N4403G 2N4403RLRA 2N4403RLRAG 2N4403RLRM 2N4403RLRMG 2N4403RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 3

SWITCHING TIME EQUIVALENT TEST CIRCUIT < 1.0 kW − 100 ms, DUTY CYCLE = 2% Figure 1. Turn−On Time 7.0 5.0 2.0 0.1 0.2 0.3 0.5 0.7 ...

Page 4

I , COLLECTOR CURRENT (mA) C Figure 5. Turn−On Time 200 100 430 1.0 mA, ...

Page 5

This group of graphs illustrates the relationship between h and other “h” parameters for this series of transistors obtain these curves, a high−gain and a low−gain unit were 1000 700 500 300 200 100 0.1 ...

Page 6

1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 1.0 0 0.4 0.2 0 0.005 0.01 0.02 0.03 ...

Page 7

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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