BC639-16ZL1G ON Semiconductor, BC639-16ZL1G Datasheet

TRANSISTOR NPN GP 80V 1A TO-92

BC639-16ZL1G

Manufacturer Part Number
BC639-16ZL1G
Description
TRANSISTOR NPN GP 80V 1A TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC639-16ZL1G

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BC639-16ZL1G
BC639-16ZL1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC639-16ZL1G
Manufacturer:
ON Semiconductor
Quantity:
500
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 1
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
These are Pb−Free Devices*
Characteristic
Rating
A
C
= 25°C
= 25°C
BC637
BC639
BC637
BC639
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJC
C
D
D
stg
−55 to +150
Value
Max
83.3
625
800
200
5.0
1.0
5.0
60
80
60
80
12
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
mW
mW
Vdc
Vdc
Vdc
Adc
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
STYLE 14
CASE 29
TO−92
(Note: Microdot may be in either location)
ORDERING INFORMATION
AYWW G
x
A
Y
WW
G
MARKING DIAGRAMS
STRAIGHT LEAD
BASE
63x
BC
G
http://onsemi.com
3
BULK PACK
1 2
= 7 or 9
= Assembly Location
= Year
= Work Week
= Pb−Free Package
3
COLLECTOR
EMITTER
Publication Order Number:
2
1
AYWW G
BC63
9−16
TAPE & REEL
AMMO PACK
BENT LEAD
G
1
2
3
BC637/D

Related parts for BC639-16ZL1G

BC639-16ZL1G Summary of contents

Page 1

... BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector - Emitter Voltage BC637 BC639 Collector - Base Voltage BC637 BC639 Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation @ T = 25°C A Derate above 25°C Total Device Dissipation @ T = 25° ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A Symbol V (BR)CEO BC637 BC639 V (BR)CES BC639−16 V (BR)CBO BC637 BC639 V (BR)EBO I CBO h FE BC637 BC639 BC639−16ZLT1 V CE(sat) V BE(on ...

Page 3

... Figure 1. Active Region Safe Operating Area 500 300 100 COLLECTOR CURRENT (mA) C Figure 3. Current−Gain — Bandwidth Product -0.2 -1.0 -1.6 -2.2 500 200 100 50 BC635 BC637 BC639 100 1 1 0.8 0 0.4 0.2 0 100 1000 1 Figure 4. “Saturation” and “On” Voltages VOLTS 0°C to +100° ...

Page 4

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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