2N6427G ON Semiconductor, 2N6427G Datasheet - Page 5

• Manufacturer Part Number: 2N6427G
• Description: TRANS SS DARL NPN 500MA 40V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6427G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 2N6427GOS

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
2N6426G
2N6426RLRAG
2N6427G
2N6427RLRAG
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
1.0 k
0.1
700
500
300
200
100
70
50
30
20
10
0.4
0.2
D = 0.5
Figure 13. Active Region Safe Operating Area
0.2
0.6
0.1
T
A
= 25°C
V
CE
1.0
Device
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.05
0.5
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
1.0
SINGLE PULSE
SINGLE PULSE
4.0
2.0
6.0
T
C
= 25°C
5.0
10
Figure 12. Thermal Response
1.0 s
1.0 ms
2N6426, 2N6427
10
100 ms
http://onsemi.com
20
20
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
t, TIME (ms)
Package
40
TO−92
TO−92
TO−92
TO−92
5
50
100
Design Note: Use of Transient
Z
Z
Thermal Resistance Data
qJC(t)
qJA(t)
200
DUTY CYCLE + t 1 f +
PEAK PULSE POWER = P
= r(t) • R
= r(t) • R
t
1
FIGURE A
P
500
P
qJC
qJA
1/f
t
P
2,000 / Tape & Ammo
2,000 / Tape & Ammo
T
5,000 Units / Bulk
5,000 Units / Bulk
T
J(pk)
J(pk)
1.0 k
Shipping
− T
− T
t 1
t P
A
C
P
= P
= P
2.0 k
(pk)
(pk)
†
P
Z
Z
P
qJA(t)
qJC(t)
5.0 k
10 k