2SC593900L Panasonic - SSG, 2SC593900L Datasheet
2SC593900L
Manufacturer Part Number
2SC593900L
Description
TRANS NPN 10VCEO 50MA SSSMINI-3
Manufacturer
Panasonic - SSG
Specifications of 2SC593900L
Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
10V
Vce Saturation (max) @ Ib, Ic
500mV @ 4mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 5mA, 4V
Power - Max
100mW
Frequency - Transition
2.7GHz
Mounting Type
Surface Mount
Package / Case
SSS Mini3-F1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SC593900LTR
Transistors
2SC5939
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• SSS-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common base)
Collector-base parameter
cuited) C
and automatic insertion through the tape packing
FE
ratio
ob
Parameter
Parameter
and reverse transfer capacitance (Common base) C
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
r
T
V
bb
P
CBO
I
T
V
V
CEO
EBO
a
∆h
I
stg
C
CE(sat)
C
C
h
C
CBO
' • C
j
f
CEO
EBO
= 25°C
FE
T
ob
rb
FE
C
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
V
C
E
C
100
125
CB
CE
CE
CE
CE
CB
CB
CB
15
10
50
= 2 mA, I
= 10 µA, I
= 20 mA, I
3
SJC00306AED
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 10 V, I
= 4 V, I
= 4 V, I
B
E
E
C
C
C
E
E
C
Conditions
Unit
B
mW
E
= −5 mA, f = 200 MHz
mA
= −5 mA, f = 31.9 MHz
= 0
= 5 mA
= 5 mA
= 100 µA
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
= 0
V
V
V
= 4 mA
= 0
rb
Marking Symbol: 1S
0.23
+0.05
–0.02
0.33
5˚
+0.05
–0.02
(0.40)
0.75
3
Min
0.80
1.20
1
1.4
10
75
3
±0.05
±0.05
(0.40)
2
0.45
Typ
1.9
1.4
11
SSSMini3-F1 Package
Max
400
1.6
0.5
2.7
1
0.10
+0.05
–0.02
1: Base
2: Emitter
3: Collector
Unit: mm
GHz
Unit
µA
pF
pF
ps
V
V
V
1
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