TIP31BG ON Semiconductor, TIP31BG Datasheet - Page 4
TIP31BG
Manufacturer Part Number
TIP31BG
Description
TRANS NPN 3A 80V HI PWR TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.TIP31AG.pdf
(6 pages)
Specifications of TIP31BG
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
300µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
2W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
25
Maximum Operating Frequency
3 MHz
Minimum Operating Temperature
- 65 C
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
3A
Dc Current Gain (min)
25
Frequency (max)
3MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TIP31BGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TIP31BG
Manufacturer:
ON Semiconductor
Quantity:
5
5.0
2.0
1.0
0.5
0.2
0.1
10
0.07
0.05
0.03
0.07
0.05
0.03
0.02
0.01
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.7
0.5
0.3
0.2
0.1
5.0
0.03
0.01
CURVES APPLY
BELOW RATED V
Figure 5. Active Region Safe Operating Area
V
0.01
CE
t
f
0.05
@ V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.02
D = 0.5
CC
t
SECONDARY BREAKDOWN
LIMITED @ T
THERMAL LIMIT @ T
(SINGLE PULSE)
BONDING WIRE LIMIT
0.07
f
0.05
0.02
@ V
0.2
0.1
10
I
= 10 V
SINGLE PULSE
C
, COLLECTOR CURRENT (AMP)
0.1
CC
Figure 6. Turn−Off Time
CEO
0.05
= 30 V
J
≤ 150°C
0.2
20
1.0
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
C
0.3
t
5.0 ms
= 25°C
s
′
0.2
0.5
0.7
50
0.5
1.0
1.0 ms
Figure 4. Thermal Response
I
I
t
T
B1
C
s
100 ms
J
′ = t
/I
= 25°C
B
= I
= 10
s
B2
1.0
- 1/8 t
http://onsemi.com
2.0 3.0
100
f
2.0
t, TIME (ms)
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150°C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
200
100
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
70
50
30
5.0
qJC(t)
J(pk)
qJC
0.1
(t) = 3.125°C/W MAX
- T
= r(t) R
C
10
0.2
= P
qJC
(pk)
0.3
1
J(pk)
V
Z
R
20
qJC(t)
, REVERSE VOLTAGE (VOLTS)
0.5
Figure 7. Capacitance
may be calculated from the data in
1.0
50
2.0 3.0
P
DUTY CYCLE, D = t
100
(pk)
C
t
5.0
1
eb
J(pk)
200
t
2
= 150°C; T
10
T
1
/t
500
J
2
= + 25°C
20
C
− V
C
30
cb
1.0 k
J(pk)
C
40
CE
is