MJE344G ON Semiconductor, MJE344G Datasheet

MJE344G

Manufacturer Part Number

MJE344G

Description

TRANS POWER NPN .5A 200V TO225AA

Manufacturer

ON Semiconductor

Datasheet

1.MJE344G.pdf (3 pages)

Specifications of MJE344G

Transistor Type

NPN

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

200V

Vce Saturation (max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (max)

1mA

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 50mA, 10V

Power - Max

20W

Frequency - Transition

15MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

200 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

0.5 A

Power Dissipation

20 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

0.5 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

15 MHz

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJE344GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJE344G

Manufacturer:

TECCOR

Quantity:

5 000

Current page: 1 of 3
Download datasheet (63Kb)

Î Î Î Î Î Î Î Î Î Î Î

MJE344

Plastic NPN Silicon

Medium−Power Transistor

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

February, 2006 − Rev. 2

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter Base Voltage

Collector Current − Continuous

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

This device is useful for medium voltage applications requiring high

Pb−Free Package is Available*

such as converters and extended range amplifiers.

Derate above 25_C

Characteristic

Rating

= 25_C

Î Î Î Î

Symbol

, T

CEO

stg

Î Î Î Î

–65 to +150

Value

0.16

Max

6.25

200

500

250

5.0

Î Î Î

mW/_C

mAdc

_C/W

Unit

Vdc

MJE344

MJE344G

150−200 VOLTS, 20 WATTS

Device

POWER TRANSISTORS

ORDERING INFORMATION

2 1

JE344 = Device Code

MARKING DIAGRAM

http://onsemi.com

NPN SILICON

0.5 AMPERE

(Pb−Free)

= Year

= Work Week

= Pb−Free Package

Package

TO−225

Publication Order Number:

JE344G

YWW

CASE 77

STYLE 1

TO−225

500 Units/Box

Shipping

MJE344/D

Related parts for MJE344G

MJE344G Summary of contents

Page 1

... POWER TRANSISTORS NPN SILICON 150−200 VOLTS, 20 WATTS TO−225 CASE 77 STYLE MARKING DIAGRAM YWW JE344G Y = Year WW = Work Week JE344 = Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJE344 TO−225 500 Units/Box TO−225 500 Units/Box MJE344G (Pb−Free) Publication Order Number: MJE344/D ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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