MJE3439G ON Semiconductor, MJE3439G Datasheet

MJE3439G

Manufacturer Part Number

MJE3439G

Description

TRANS POWER NPN .3A 350V TO225AA

Manufacturer

ON Semiconductor

Datasheet

1.MJE3439G.pdf (4 pages)

Specifications of MJE3439G

Transistor Type

NPN

Current - Collector (ic) (max)

300mA

Voltage - Collector Emitter Breakdown (max)

350V

Vce Saturation (max) @ Ib, Ic

500mV @ 4mA, 50mA

Current - Collector Cutoff (max)

20µA

Dc Current Gain (hfe) (min) @ Ic, Vce

15 @ 20mA, 10V

Power - Max

15W

Frequency - Transition

15MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

350 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

0.3 A

Power Dissipation

15 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

0.3 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

15 MHz

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJE3439GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJE3439G

Manufacturer:

ON Semiconductor

Quantity:

363

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Î Î Î Î Î Î Î Î Î Î Î

MJE3439

NPN Silicon High−Voltage

Power Transistor

requiring high f

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

February, 2006 − Rev. 11

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

This device is designed for use in line−operated equipment

High DC Current Gain − h

Current Gain Bandwidth Product − f

Low Output Capacitance − C

Pb−Free Package is Available*

Derate above 25_C

Characteristic

Rating

= 25_C

= 40−160 @ I

= 20 mAdc

= 10 pF (Max) @ f

= 1.0 MHz

Î Î Î Î

Symbol

= 15 MHz (Min) @ I

= 10 mAdc

, T

CEO

stg

Î Î Î Î

–65 to +150

Value

0.12

Max

8.33

350

450

150

5.0

0.3

Î Î Î

mW/_C

mAdc

_C/W

Unit

Vdc

Adc

MJE3439

MJE3439G

Device

POWER TRANSISTOR

350 VOLTS, 15 WATTS

ORDERING INFORMATION

2 1

E3439 = Device Code

MARKING DIAGRAM

http://onsemi.com

NPN SILICON

0.3 AMPERE

(Pb−Free)

= Year

= Work Week

= Pb−Free Package

Package

TO−225

Publication Order Number:

E3439G

YWW

CASE 77

STYLE 1

TO−225

500 Units/Box

Shipping

MJE3439/D

Related parts for MJE3439G

MJE3439G Summary of contents

Page 1

... POWER TRANSISTOR NPN SILICON 350 VOLTS, 15 WATTS TO−225 CASE 77 STYLE MARKING DIAGRAM YWW E3439G Y = Year WW = Work Week E3439 = Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJE3439 TO−225 500 Units/Box TO−225 500 Units/Box MJE3439G (Pb−Free) Publication Order Number: MJE3439/D ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

The Safe Operating Area Curves indicate I Collector load lines for specific circuits must ...

Page 4

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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