MJE371G ON Semiconductor, MJE371G Datasheet

MJE371G

Manufacturer Part Number

MJE371G

Description

TRANS POWER PNP 4A 40V TO225AA

Manufacturer

ON Semiconductor

Type

Medium Powerr

Datasheets

1.MJE371G.pdf (3 pages)

2.MJE371G.pdf (2 pages)

Specifications of MJE371G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

40V

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 1A, 1V

Power - Max

40W

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

4 V

Maximum Dc Collector Current

4 A

Power Dissipation

40 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

4 A

Dc Collector/base Gain Hfe Min

Minimum Operating Temperature

- 65 C

Current, Collector

4 A

Current, Gain

Package Type

TO-225

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

3.12 °C/W

Voltage, Breakdown, Collector To Emitter

40 V

Voltage, Collector To Base

40 V

Voltage, Collector To Emitter

40 V

Voltage, Emitter To Base

4 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Frequency - Transition

Vce Saturation (max) @ Ib, Ic

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MJE371GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJE371G

Manufacturer:

ON Semiconductor

Quantity:

1 834

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MJE371

Plastic Medium−Power

PNP Silicon Transistor

switching circuits. Recommended for use in 5 to 20 Watt audio

amplifiers utilizing complementary symmetry circuitry.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

February, 2006 − Rev. 6

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

ON CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

Collector−Emitter Sustaining Voltage

Collector−Base Cutoff Current

Emitter−Base Cutoff Current

DC Current Gain (Note 1)

This device is designed for use in general−purpose amplifier and

DC Current Gain − h

MJE371 is Complementary to NPN MJE521

Pb−Free Package is Available*

Derate above 25_C

= 100 mAdc, I

= 1.0 Adc, V

= 4.0 Vdc, I

= 40 Vdc, I

Characteristic

Rating

= 0)

= 1.0 Vdc)

= 0) (Note 1)

− Continuous

− Peak

= 40 (Min) @ I

= 1.0 Adc

= 25_C

Î Î Î Î

Symbol

CEO(sus)

= 25°C unless otherwise noted)

CBO

EBO

, T

CEO

stg

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Î Î

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Î Î Î Î

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Min

–65 to +150

−

Î Î Î

Value

Max

3.12

320

4.0

8.0

2.0

Max

100

−

Î Î Î

mW/_C

mAdc

_C/W

Unit

Vdc

Unit

Vdc

Adc

−

MJE371

MJE371G

Device

POWER TRANSISTOR

40 VOLTS, 40 WATTS

ORDERING INFORMATION

2 1

JE371 = Device Code

MARKING DIAGRAM

http://onsemi.com

PNP SILICON

4 AMPERES

(Pb−Free)

= Year

= Work Week

= Pb−Free Package

Package

TO−225

Publication Order Number:

JE371G

YWW

CASE 77

STYLE 1

TO−225

500 Units/Box

Shipping

MJE371/D

Related parts for MJE371G

MJE371G Summary of contents

Page 1

... AMPERES POWER TRANSISTOR PNP SILICON 40 VOLTS, 40 WATTS TO−225 CASE 77 STYLE MARKING DIAGRAM YWW JE371G Y = Year WW = Work Week JE371 = Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJE371 TO−225 500 Units/Box TO−225 500 Units/Box MJE371G (Pb−Free) Publication Order Number: MJE371/D ...

Page 2

T = 150°C J 0.5 BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT 0.3 THERMAL LIMIT @ T = 25°C C 0.2 0.1 2.0 4.0 6.0 8 COLLECTOR−EMITTER VOLTAGE (VOLTS) ...

Page 3

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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