MJE700G ON Semiconductor, MJE700G Datasheet

TRANS DARL PNP 4A 60V TO225AA

MJE700G

Manufacturer Part Number
MJE700G
Description
TRANS DARL PNP 4A 60V TO225AA
Manufacturer
ON Semiconductor
Type
Power, Switchr
Datasheets

Specifications of MJE700G

Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-225-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
4 A
Maximum Collector Cut-off Current
100 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Current, Gain
100
Current, Input
0.1 ADC
Current, Output
4 ADC
Package Type
TO-225
Polarity
PNP
Power Dissipation
40 W
Primary Type
Si
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Input
5 V
Voltage, Output
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE700GOS
MJE700, MJE702, MJE703
(PNP) - MJE800, MJE802,
MJE803 (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
low−speed switching applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 10
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
These devices are designed for general−purpose amplifier and
Limit Leakage − Multiplication
High DC Current Gain − h
Monolithic Construction with Built−in Base−Emitter Resistors to
Choice of Packages − MJE700 and MJE800 Series
Pb−Free Packages are Available*
MJE702, MJE703, MJE802, MJE803
MJE702, MJE703, MJE802, MJE803
Characteristic
Rating
Derate above 25_C
MJE700, MJE800
MJE700, MJE800
C
= 25_C
FE
= 2000 (Typ) @ I
= 2.0 Adc
Symbol
Symbol
T
V
J
V
V
q
P
, T
CEO
I
I
CB
EB
JC
C
B
D
stg
–55 to +150
C
Value
0.32
Max
6.25
5.0
4.0
0.1
60
80
60
80
40
1
mW/_C
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
BASE
COMPLEMENTARY SILICON
1
DARLINGTON POWER
3
ORDERING INFORMATION
COLLECTOR 2
2 1
EMITTER 3
Y
WW
JEx0y = Device Code
G
MJE800
MJE802
MJE803
MARKING DIAGRAM
TRANSISTORS
NPN
http://onsemi.com
4.0 AMPERE
40 WATT
50 WATT
= Year
= Work Week
= Pb−Free Package
x = 7 or 8
y = 0, 2, or 3
Publication Order Number:
JEx0yG
BASE
YWW
1
CASE 77
STYLE 3
TO−225
COLLECTOR 2
EMITTER 3
MJE700
MJE702
MJE703
PNP
MJE700/D

Related parts for MJE700G

MJE700G Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 May, 2009 − ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note mAdc Collector Cutoff Current ( Vdc Vdc ...

Page 3

R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPE, e.g.: 1 ≈ 100 mA 1N5825 USED ABOVE I B ≈ 100 mA MSD6100 USED BELOW ...

Page 4

PNP MJE700 Series 6 125°C J 4.0 k 3.0 k 25°C 2 55°C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 0.4 0 COLLECTOR CURRENT (AMP) C 3.4 3 ...

Page 5

... ORDERING INFORMATION Device MJE700 MJE700G MJE702 MJE702G MJE703 MJE703G MJE800 MJE800G MJE802 MJE802G MJE803 MJE803G Package TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) http://onsemi.com 5 Shipping 50 Units / Bulk ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

Related keywords