TIP32CG ON Semiconductor, TIP32CG Datasheet - Page 5

• Manufacturer Part Number: TIP32CG
• Description: TRANS PNP 3A 100V HI PWR TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of TIP32CG

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 300µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 3 A
• Current, Gain: 50
• Frequency: 3 MHz
• Package Type: TO-220AB
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.125 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 1.2 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP32CGOS

10
10
10
500
300
100
10
10
10
10
7.0
5.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.003
70
50
30
10
-1
-2
-3
- 0.4
0
3
2
1
0
0.03
0.005 0.01 0.02 0.03 0.05
T
- 0.3 - 0.2 - 0.1
V
J
0.05 0.07
CE
= 25°C
T
T
J
REVERSE
Figure 12. Collector Cut−Off Region
J
V
V
= 30 V
= 150°C
V
- 55°C
= 150°C
CE(sat)
25°C
BE
BE(sat)
100°C
I
25°C
I
C
, BASE−EMITTER VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
0.1
Figure 10. “On” Voltages
@ I
@ I
C
C
/I
/I
B
B
= 10
= 10
0
V
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
BE
0.3
0.1
@ V
CE
0.2 0.3 0.5
0.5
I
CES
= 2.0 V
0.7 1.0
FORWARD
V
CE
1.0
= 2.0 V
http://onsemi.com
2.0 3.0
3.0
5
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
- 1.5
- 2.0
- 2.5
- 0.5
- 1.0
10
10
10
10
10
10
2.0
1.6
1.2
0.8
0.4
0.003 0.005 0.01 0.02
0
0
7
6
5
4
3
2
1.0
20
Figure 13. Effects of Base−Emitter Resistance
I
C
*APPLIES FOR I
2.0
I
C
≈ I
Figure 9. Collector Saturation Region
T
40
= 0.3 A
Figure 11. Temperature Coefficients
J
CES
= - 65°C TO + 150°C
T
I
I
C
C
J
5.0
, JUNCTION TEMPERATURE (°C)
= 2 x I
, COLLECTOR CURRENT (AMP)
60
I
*q
OBTAINED FROM FIGURE 12)
B
, BASE CURRENT (mA)
VC
q
CES
10
C
VB
(TYPICAL I
/I
FOR V
B
1.0 A
FOR V
≤ h
0.05
I
C
80
20
FE
= 10 x I
CE(sat)
/2
BE
0.1
CES
100
CES
VALUES
50
0.2 0.3 0.5
100 200
120
3.0 A
T
V
J
CE
= 25°C
1.0
140
= 30 V
500
2.0 3.0
1000
160