TIP120G ON Semiconductor, TIP120G Datasheet - Page 5

• Manufacturer Part Number: TIP120G
• Description: TRANS DARL NPN 5A 60V TO220AB
• Manufacturer: ON Semiconductor
• Type: Medium Power, Switchr

Specifications of TIP120G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 4V @ 20mA, 5A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 3A, 3V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 5 A
• Maximum Collector Cut-off Current: 200 uA
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Current, Gain: 2500
• Current, Input: 120 mA
• Current, Output: 5 A
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 62.5
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Input: 2.5 V
• Voltage, Output: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TIP120GOS

10,000
0.05
0.02
5.0
2.0
1.0
0.5
0.2
0.1
5000
3000
2000
1000
20
10
500
300
200
100
1.0
50
30
20
10
1.0
Figure 5. Active-Region Safe Operating Area
2.0
2.0
V
Figure 6. Small-Signal Current Gain
CE
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
T
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
3.0
T
V
I
C
= 150°C
C
CE
C
5.0
PNP
NPN
= 3.0 Adc
= 25°C
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
= 25°C (SINGLE PULSE)
= 4.0 Vdc
CEO
5.0
10
f, FREQUENCY (kHz)
7.0
20
10
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
50
dc
500 ms
20
100
1 ms
30
5 ms
200
50
100 ms
http://onsemi.com
500
70
100
1000
5
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150°C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
300
200
100
70
50
30
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
0.1
0.2
J(pk)
PNP
NPN
0.5
may be calculated from the data in Figure 4.
V
R
Figure 7. Capacitance
, REVERSE VOLTAGE (VOLTS)
1.0
C
2.0
ib
5.0
C
ob
J(pk)
10
T
J
= 150°C; T
20
= 25°C
C
50
- V
J(pk)
C
100
CE
is