TIP117G ON Semiconductor, TIP117G Datasheet - Page 5

• Manufacturer Part Number: TIP117G
• Description: TRANS DARL PNP 2A 100V TO220AB
• Manufacturer: ON Semiconductor
• Type: Medium Power, Switchr

Specifications of TIP117G

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 8mA, 2A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 1A, 4V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 2 A
• Maximum Collector Cut-off Current: 1000 uA
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 2 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Current, Gain: 500
• Current, Input: 50 mA
• Current, Output: 2 A
• Package Type: TO-220AB
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 62.5
• Voltage, Collector To Emitter, Saturation: 2.5 V
• Voltage, Input: 5 V
• Voltage, Output: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TIP117GOS

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
pulse limits are valid for duty cycles to 10% provided T
< 150°C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
C
There are two limitations on the power handling ability of
The data of Figures 5 and 6 is based on T
is variable depending on conditions. Second breakdown
4.0
2.0
1.0
0.1
10
1.0
CURVES APPLY BELOW
RATED V
J(pk)
V
CE
may be calculated from the data in Figure 4.
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECONDARY BREAKDOWN LIMITED
CEO
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
Figure 5. TIP115, 116, 117
= 150°C
C
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
= 25°C (SINGLE PULSE)
10
ACTIVE-REGION SAFE-OPERATING AREA
TIP115
TIP116
TIP117
5 ms
dc
J(pk)
40
= 150°C;
1 ms
C
60 80 100
http://onsemi.com
- V
J(pk)
CE
5
4.0
2.0
1.0
0.1
10
200
100
1.0
70
50
30
20
10
0.04
CURVES APPLY BELOW
RATED V
0.06 0.1
V
CE
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECONDARY BREAKDOWN LIMITED
CEO
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
Figure 6. TIP110, 111, 112
= 150°C
0.2
C
PNP
NPN
= 25°C (SINGLE PULSE)
V
R
Figure 7. Capacitance
, REVERSE VOLTAGE (VOLTS)
0.4 0.6 1.0
10
C
2.0
ib
TIP110
TIP111
TIP112
4.0
dc
6.0 10
T
C
= 25°C
C
60
ob
20
80 100
40