2N6109G ON Semiconductor, 2N6109G Datasheet

2N6109G

Manufacturer Part Number

2N6109G

Description

TRANS PNP PWR GP 7A 50V TO220AB

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.2N6107G.pdf (5 pages)

2.2N6109G.pdf (4 pages)

Specifications of 2N6109G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

50V

Vce Saturation (max) @ Ib, Ic

3.5V @ 3A, 7A

Current - Collector Cutoff (max)

1mA

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 2.5A, 4V

Power - Max

40W

Frequency - Transition

10MHz

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

50 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

7 A

Power Dissipation

40 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

7 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

10 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

7 A

Current, Gain

2.3

Frequency

1 MHz

Package Type

TO-220AB

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

3.125 °C/W

Voltage, Breakdown, Collector To Emitter

50 V

Voltage, Collector To Base

60 V

Voltage, Collector To Emitter

50 V

Voltage, Collector To Emitter, Saturation

3.5 V

Voltage, Emitter To Base

5 V

Collector Emitter Voltage V(br)ceo

50V

Transition Frequency Typ Ft

10MHz

Power Dissipation Pd

40W

Dc Collector Current

-7A

Dc Current Gain Hfe

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N6109GOS

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PNP - 2N6107, 2N6109,

2N6111; NPN - 2N6288,

2N6292

Complementary Silicon

Plastic Power Transistors

switching applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb-Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

November, 2007 - Rev. 8

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Base Current

Total Power Dissipation @ T

Derate above 25_C

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction-to-Case

These devices are designed for use in general-purpose amplifier and

DC Current Gain Specified to 7.0 Amperes

Collector-Emitter Sustaining Voltage -

High Current Gain - Bandwidth Product

TO-220AB Compact Package

Pb-Free Packages are Available*

CEO(sus)

= 4.0 MHz (Min) @ I

= 10 MHz (Min) @ I

Characteristics

= 30-150 @ I

= 3.0 Adc - 2N6111, 2N6288

= 2.3 (Min) @ I

2N6109 and 2N6292 are Preferred Devices

Rating

- Peak

= 30 Vdc (Min) - 2N6111, 2N6288

= 50 Vdc (Min) - 2N6109

= 70 Vdc (Min) - 2N6107, 2N6292

(Note 1)

2N6107, 2N6292

2N6111, 2N6288

= 25_C

= 7.0 Adc - All Devices

2N6109

= 500 mAdc - 2N6107, 09, 11

= 500 mAdc - 2N6288, 90, 92

Symbol

CEO

, T

qJC

stg

-65 to +150

Value

3.125

0.32

Max

5.0

7.0

3.0

_C/W

W/°C

Unit

Vdc

Adc

Unit

°C

See detailed ordering, marking, and shipping information in

the package dimensions section on page 4 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

30 - 50 - 70 VOLTS, 40 WATTS

COMPLEMENTARY SILICON

POWER TRANSISTORS

2N6xxx = Specific Device Code

xxx

ORDERING INFORMATION

http://onsemi.com

7 AMPERE

CASE 221A

= See Table on Page 4

= Pb-Free Package

= Assembly Location

= Year

= Work Week

TO-220AB

STYLE 1

Publication Order Number:

MARKING

DIAGRAM

2N6xxxG

AYWW

2N6107/D

Related parts for 2N6109G

2N6109G Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 November, 2007 - Rev. 8 ...

Page 2

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 3

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 9.0 V ≤ DUTY CYCLE = 1.0% R and R B 2.0 1.0 0.7 0.5 0.3 0.2 0.1 ...

Page 4

... I , COLLECTOR CURRENT (AMP) C Figure 6. Turn-Off Time ORDERING INFORMATION Device 2N6107 2N6107G 2N6109 2N6109G 2N6111 2N6111G 2N6288 2N6288G 2N6292 2N6292G There are two limitations on the power handling ability of 0 transistor: average junction temperature and second 0.5 ms breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation ...

Page 5

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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