D45H11G ON Semiconductor, D45H11G Datasheet

D45H11G

Manufacturer Part Number

D45H11G

Description

TRANS PNP 10A 80V TO220AB

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.D45H11G.pdf (5 pages)

2.D44H8G.pdf (3 pages)

Specifications of D45H11G

Transistor Type

PNP

Current - Collector (ic) (max)

10A

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

1V @ 400mA, 8A

Current - Collector Cutoff (max)

10µA

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 4A, 1V

Power - Max

Frequency - Transition

40MHz

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

10 A

Power Dissipation

70 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

10 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

40 MHz

Minimum Operating Temperature

- 55 C

Current, Collector

10 A

Current, Gain

Frequency

40 MHz

Package Type

TO-220

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

62.5 °C/W

Voltage, Breakdown, Collector To Emitter

80 V

Voltage, Collector To Emitter

80 V

Voltage, Collector To Emitter, Saturation

1 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

D45H11GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

D45H11G

Manufacturer:

ON Semiconductor

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

D45H11G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

D45H11G

Quantity:

Company:

H&T Electronics

Part Number:

D45H11G

Quantity:

15 000

Current page: 1 of 5
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D44H Series (NPN),

D45H Series (PNP)

Complementary Silicon

Power Transistors

be used as general purpose power amplification and switching such

as output or driver stages in applications such as switching regulators,

converters and power amplifiers.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Width v 6.0 ms, Duty Cycle v 50%.

*For additional information on our Pb-Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

November, 2007 - Rev. 10

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector-Emitter Voltage

Collector Current

Total Power Dissipation

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

Emitter Base Voltage

These series of plastic, silicon NPN and PNP power transistors can

Low Collector-Emitter Saturation Voltage

Fast Switching Speeds

Complementary Pairs Simplifies Designs

Pb-Free Packages are Available*

D44H8, D45H8

D44H11, D45H11

- Continuous

- Peak (Note 1)

@ T

CE(sat)

Characteristic

= 25°C

Rating

= 1.0 V (Max) @ 8.0 A

Preferred Devices

Symbol

, T

CEO

qJC

qJA

stg

-55 to +150

Value

Max

62.5

275

5.0

2.0

1.8

°C/W

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

D44H8

D44H8G

D44H11

D44H11G

D45H8

D45H8G

D45H11

D45H11G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

TRANSISTORS 60, 80 VOLTS

10 AMP COMPLEMENTARY

Device

D4xHyy = Device Code

ORDERING INFORMATION

SILICON POWER

http://onsemi.com

CASE 221A-09

= Assembly Location

= Year

= Work Week

= Pb-Free Package

(Pb-Free)

TO-220AB

(Pb-Free)

Package

TO-220

STYLE 1

TO-220

x = 4 or 5

yy = 8 or 11

Publication Order Number:

50 Units/Rail

Shipping

MARKING

DIAGRAM

D4xHyyG

AYWW

D44H/D

†

Related parts for D45H11G

D45H11G Summary of contents

Page 1

... T 275 L D44H11G D45H8 D45H8G D45H11 D45H11G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

25°C 125°C -40°C 100 10 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. D44H11 DC Current Gain 1000 25°C 125°C -40°C 100 10 0.01 0 ...

Page 4

BE(sat 1.0 0.8 0.6 25°C 0.4 0 COLLECTOR CURRENT (AMPS) C Figure 7. D44H11 ON-Voltage 100 5.0 3.0 2.0 ≤ 70° C ...

Page 5

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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