TRANS PWR NPN 12A 400V TO220AB

MJE13009G

Manufacturer Part NumberMJE13009G
DescriptionTRANS PWR NPN 12A 400V TO220AB
ManufacturerON Semiconductor
MJE13009G datasheet
 

Specifications of MJE13009G

Transistor TypeNPNCurrent - Collector (ic) (max)12A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic3V @ 3A, 12A
Dc Current Gain (hfe) (min) @ Ic, Vce8 @ 5A, 5VPower - Max2W
Frequency - Transition4MHzMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityNPN
Mounting StyleThrough HoleCollector- Emitter Voltage Vceo Max400 V
Emitter- Base Voltage Vebo9 VMaximum Dc Collector Current12 A
Power Dissipation12 WMaximum Operating Temperature+ 150 C
Continuous Collector Current12 ADc Collector/base Gain Hfe Min8
Maximum Operating Frequency4 MHzMinimum Operating Temperature- 65 C
Number Of Elements1Collector-emitter Voltage400V
Collector-base Voltage700VEmitter-base Voltage9V
Collector Current (dc) (max)12ADc Current Gain (min)8
Frequency (max)4MHzOperating Temp Range-65C to 150C
Operating Temperature ClassificationMilitaryMountingThrough Hole
Pin Count3 +TabPackage TypeTO-220AB
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Other namesMJE13009GOS  
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MJE13009G
SWITCHMODEt Series
NPN Silicon Power
Transistors
The MJE13009G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
V
400 V and 300 V
CEO(sus)
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C t
100_C is 120 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
A
Derate above 25°C
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 9
= 100_C
C
@ 8 A,
c
Symbol
Value
Unit
V
400
Vdc
CEO(sus)
V
700
Vdc
CEV
V
9
Vdc
EBO
I
12
Adc
C
I
24
CM
I
6
Adc
B
I
12
BM
I
18
Adc
E
I
36
EM
P
2
W
D
0.016
W/_C
P
100
W
D
0.8
W/_C
T
, T
−65 to
_C
J
stg
+150
Symbol
Max
Unit
R
62.5
_C/W
qJA
R
1.25
_C/W
qJC
Device
T
275
_C
L
MJE13009G
1
http://onsemi.com
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 100 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJE13009G
AY WW
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
MJE13009/D

MJE13009G Summary of contents

  • Page 1

    ... MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

  • Page 3

    T = 25° 0.5 THERMAL LIMIT 0.2 BONDING WIRE LIMIT 0.1 SECOND BREAKDOWN LIM­ CURVES APPLY BELOW RATED IT 0.05 V CEO 0.02 0. ...

  • Page 4

    T = 150° 25° 55° 0.5 0 0.2 0 COLLECTOR CURRENT (AMP) C Figure 5. DC Current Gain 1.4 1 ...

  • Page 5

    Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 1N4933 0.001 2N2222 W 1 DUTY CYCLE ≤ 10 ≤ ...

  • Page 6

    ... The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (See Table 1) providing correlation between test procedures and actual use conditions. 3. For detailed information on specific switching applications, see ON Semiconductor Application Notes AN−719, AN−767. http://onsemi.com ...

  • Page 7

    RESISTIVE SWITCHING PERFORMANCE 125 V CC 700 25°C 500 J 300 200 t r 100 BE(off) 50 0.2 0.3 0.5 0.7 ...

  • Page 8

    Table 2. Applications Examples of Switching Circuits CIRCUIT SERIES SWITCHING REGULATOR RINGING CHOKE INVERTER PUSH−PULL INVERTER/CONVERTER 24 A ...

  • Page 9

    Table 3. Typical Inductive Switching Performance Î Î Î Î Î Î AMP Î Î Î Î Î Î 3 Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

  • Page 10

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...