MJE13009G ON Semiconductor, MJE13009G Datasheet

TRANS PWR NPN 12A 400V TO220AB

MJE13009G

Manufacturer Part Number
MJE13009G
Description
TRANS PWR NPN 12A 400V TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJE13009G

Transistor Type
NPN
Current - Collector (ic) (max)
12A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 3A, 12A
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 5A, 5V
Power - Max
2W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
12 A
Power Dissipation
12 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
12 A
Dc Collector/base Gain Hfe Min
8
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Number Of Elements
1
Collector-emitter Voltage
400V
Collector-base Voltage
700V
Emitter-base Voltage
9V
Collector Current (dc) (max)
12A
Dc Current Gain (min)
8
Frequency (max)
4MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE13009GOS
MJE13009G
SWITCHMODEt Series
NPN Silicon Power
Transistors
The MJE13009G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
V
400 V and 300 V
CEO(sus)
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C t
100_C is 120 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
A
Derate above 25°C
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 9
= 100_C
C
@ 8 A,
c
Symbol
Value
Unit
V
400
Vdc
CEO(sus)
V
700
Vdc
CEV
V
9
Vdc
EBO
I
12
Adc
C
I
24
CM
I
6
Adc
B
I
12
BM
I
18
Adc
E
I
36
EM
P
2
W
D
0.016
W/_C
P
100
W
D
0.8
W/_C
T
, T
−65 to
_C
J
stg
+150
Symbol
Max
Unit
R
62.5
_C/W
qJA
R
1.25
_C/W
qJC
Device
T
275
_C
L
MJE13009G
1
http://onsemi.com
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 100 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJE13009G
AY WW
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
MJE13009/D

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MJE13009G Summary of contents

Page 1

... MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

T = 25° 0.5 THERMAL LIMIT 0.2 BONDING WIRE LIMIT 0.1 SECOND BREAKDOWN LIM­ CURVES APPLY BELOW RATED IT 0.05 V CEO 0.02 0. ...

Page 4

T = 150° 25° 55° 0.5 0 0.2 0 COLLECTOR CURRENT (AMP) C Figure 5. DC Current Gain 1.4 1 ...

Page 5

Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 1N4933 0.001 2N2222 W 1 DUTY CYCLE ≤ 10 ≤ ...

Page 6

... The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (See Table 1) providing correlation between test procedures and actual use conditions. 3. For detailed information on specific switching applications, see ON Semiconductor Application Notes AN−719, AN−767. http://onsemi.com ...

Page 7

RESISTIVE SWITCHING PERFORMANCE 125 V CC 700 25°C 500 J 300 200 t r 100 BE(off) 50 0.2 0.3 0.5 0.7 ...

Page 8

Table 2. Applications Examples of Switching Circuits CIRCUIT SERIES SWITCHING REGULATOR RINGING CHOKE INVERTER PUSH−PULL INVERTER/CONVERTER 24 A ...

Page 9

Table 3. Typical Inductive Switching Performance Î Î Î Î Î Î AMP Î Î Î Î Î Î 3 Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 10

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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