MJE15035G ON Semiconductor, MJE15035G Datasheet
MJE15035G
Manufacturer Part Number
MJE15035G
Description
TRANS PWR PNP 4A 350V TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.MJE15035G.pdf
(5 pages)
Specifications of MJE15035G
Transistor Type
PNP
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 2A, 5V
Power - Max
2W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
30 MHz
Minimum Operating Temperature
- 65 C
Collector Emitter Voltage V(br)ceo
350V
Transition Frequency Typ Ft
30MHz
Power Dissipation Pd
50mW
Dc Collector Current
-4A
Dc Current Gain Hfe
100
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE15035GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE15035G
Manufacturer:
ON
Quantity:
13 000
Part Number:
MJE15035G
Manufacturer:
ON/安森美
Quantity:
20 000
MJE15034 NPN,
MJE15035 PNP
Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
use as high−frequency drivers in audio amplifiers.
Features
•
•
•
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Complementary silicon plastic power transistors are designed for
h
Collector−Emitter Sustaining Voltage −
High Current Gain − Bandwidth Product
TO−220AB Compact Package
Epoxy meets UL 94 V−0 @ 0.125 in
ESD Ratings: Machine Model: C
Pb−Free Packages are Available*
FE
Derate above 25_C
Derate above 25_C
= 100 (Min) @ I
= 10 (Min) @ I
V
f
T
CEO(sus)
= 30 MHz (Min) @ I
Characteristic
Rating
Human Body Model: 3B
− Peak
= 350 Vdc (Min) − MJE15034, MJE15035
C
C
= 2.0 Adc
= 0.5 Adc
A
C
Preferred Device
= 25_C
= 25_C
C
= 500 mAdc
Symbol
Symbol
T
V
R
R
J
V
V
P
P
, T
CEO
I
I
qJC
qJA
CB
EB
C
B
D
D
stg
–65 to +150
Value
0.016
0.40
Max
62.5
350
350
5.0
4.0
8.0
1.0
2.0
2.5
50
1
_C/W
_C/W
W/_C
W/_C
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
W
W
Preferred devices are recommended choices for future use
and best overall value.
MJE15034
MJE15034G
MJE15035
MJE15035G
COMPLEMENTARY SILICON
Device
POWER TRANSISTORS
350 VOLTS, 50 WATTS
MJE1503x = Device Code
A
Y
WW
G
ORDERING INFORMATION
1
2
MARKING DIAGRAM
3
4.0 AMPERES
http://onsemi.com
TO−220AB
TO−220AB
TO−220AB
TO−220AB
MJE1503xG
(Pb−Free)
(Pb−Free)
Package
4
= Location Code
= Year
= Work Week
= Pb−Free Package
AYWW
x = 4 or 5
Publication Order Number:
CASE 221A
TO−220AB
STYLE 1
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Shipping
MJE15034/D
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MJE15035G Summary of contents
Page 1
... Symbol Max Unit _C/W R 2.5 qJC _C/W 62.5 R qJA MJE15034 MJE15034G MJE15035 MJE15035G Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS 4 TO−220AB CASE 221A 1 STYLE 1 ...
Page 2
ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
Page 3
T = 150°C J 25°C 100 −40°C 10 1.0 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 4. DC Current Gain, V NPN MJE15034 1000 T = 150°C J 25°C −40°C 100 10 1.0 0.01 0 ...
Page 4
MJE15034 NPN, MJE15035 PNP −40°C 1.0 25° 150°C J 0.1 0.01 0.1 1 COLLECTOR CURRENT (AMPS) C Figure 10. V BE(sat) NPN MJE15034 1.2 1.0 −40°C 0.8 0.6 25°C ...
Page 5
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...