MJE15029G ON Semiconductor, MJE15029G Datasheet
MJE15029G
Manufacturer Part Number
MJE15029G
Description
TRANS POWER PNP 8A 120V TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.MJE15029G.pdf
(6 pages)
Specifications of MJE15029G
Transistor Type
PNP
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 2V
Power - Max
50W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
8 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
40
Maximum Operating Frequency
30 MHz
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJE15029GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE15029G
Manufacturer:
ON Semiconductor
Quantity:
400
MJE15028, MJE15030 (NPN)
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
audio amplifiers.
Features
•
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
These devices are designed for use as high−frequency drivers in
DC Current Gain Specified to 4.0 Amperes
Collector−Emitter Sustaining Voltage −
High Current Gain − Bandwidth Product
TO−220AB Compact Package
Pb−Free Packages are Available*
h
V
f
T
FE
CEO(sus)
= 30 MHz (Min) @ I
Characteristics
= 40 (Min) @ I
= 20 (Min) @ I
Rating
MJE15028, MJE15029
MJE15030, MJE15031
MJE15028, MJE15029
MJE15030, MJE15031
= 120 Vdc (Min); MJE15028, MJE15029
= 150 Vdc (Min); MJE15030, MJE15031
− Continuous
− Peak
Preferred Device
C
C
C
C
= 25_C
= 25_C
= 3.0 Adc
= 4.0 Adc
C
= 500 mAdc
Symbol
Symbol
T
V
R
R
J
V
V
I
P
P
CEO
, T
CM
I
I
qJC
qJA
CB
EB
C
B
D
D
stg
Value
−65 to
0.016
+150
0.40
Max
62.5
120
150
120
150
5.0
8.0
2.0
2.0
2.5
16
50
1
W/_C
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
POWER TRANSISTORS
MJE150xx = Device Code
G
A
Y
WW
1
ORDERING INFORMATION
2
3
MARKING DIAGRAM
http://onsemi.com
8 AMPERE
MJE150xxG
= Pb−Free Package
= Assembly Location
= Year
= Work Week
AY WW
x = 28, 29, 30, or 31
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
MJE15028/D
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MJE15029G Summary of contents
Page 1
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 4 ...
Page 2
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ELECTRICAL ...
Page 3
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 1.0 0 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0 100 ...
Page 4
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 100 0 25°C C NPN 10 5.0 0.5 0.7 1.0 2.0 3.0 f, FREQUENCY (MHz) Figure 6. Small−Signal Current Gain ...
Page 5
... I , COLLECTOR CURRENT (AMP) C Figure 10. Turn−On Times ORDERING INFORMATION Device MJE15028 MJE15028G MJE15029 MJE15029G MJE15030 MJE15030G MJE15031 MJE15031G 5.0 3.0 t (NPN, PNP) d 2.0 1.0 t 0.5 f 0.2 t (NPN) f 0.1 5.0 10 0.1 ...
Page 6
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...